Semiconductor memory device capable of driving non-selected word lines to first and second potentials
Patent 6628564 Issued on September 30, 2003. Estimated Expiration Date: 
June 25, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
June 25, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesPumped wordlines Row decoder/driver circuit for determining non selected wordlines and for driving non-selected wordlines to a potential less than the lowest potential of the digit lines Dual strobed negative pumped wordlines for dynamic random access memories Dual strobed negative pumped worldlines for dynamic random access memories Patent #: 5926433 Inventors
ApplicationNo. 09/339855 filed on 06/25/1999US Classes:365/230.06, Particular decoder or driver circuit365/189.09, Including reference or bias voltage generator365/189.11, Including level shift or pull-up circuit365/194, Delay365/207, Differential sensing365/208SemiconductorsExaminersPrimary: Tran, Andrew Q.Attorney, Agent or FirmInternational ClassesG11C 8/00 (20060101)G11C 8/08 (20060101) Foreign Application Priority Data1998-07-16 JPAbstractA semiconductor device includes a word line drive circuit resetting the word line by driving the word line connected to a memory cell and switching a reset level of the word line drive circuit at the time of the reset operation of the word line. Further, a semiconductor device includes a memory cell array formed by arranging a plurality of memory cells and a reset level switch circuit for selecting a first potential or a second potential and supplying the first potential or the second potential to the word line drive circuit. | |
