U.S. patents available from 1976 to present.
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Sample inspection system

Patent 6618134 Issued on September 9, 2003. Estimated Expiration Date: Icon_subject December 27, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Apparatus for reflectance measurement of fluorescent radiation and composite useful therein
Patent #: 4395126
Issued on: 07/26/1983
Inventor: Kramer

Method of inspecting microscopic surface defects
Patent #: 4449818
Issued on: 05/22/1984
Inventor: Yamaguchi ,   et al.

Apparatus for continuously measuring the degree of milling of grains
Patent #: 4540286
Issued on: 09/10/1985
Inventor: Satake ,   et al.

Horizontal position detecting device
Patent #: 4558949
Issued on: 12/17/1985
Inventor: Uehara ,   et al.

Position detecting system
Patent #: 4589773
Issued on: 05/20/1986
Inventor: Ido ,   et al.

Apparatus and method for detecting defects and dust on a patterned surface
Patent #: 4598997
Issued on: 07/08/1986
Inventor: Steigmeier ,   et al.

Foreign particle detecting method and apparatus
Patent #: 4669875
Issued on: 06/02/1987
Inventor: Shiba ,   et al.

Surface pit detection system and method
Patent #: 4794265
Issued on: 12/27/1988
Inventor: Quackenbos ,   et al.

Apparatus for separating specular from diffuse radiation
Patent #: 4861164
Issued on: 08/29/1989
Inventor: West

Particle detection on patterned wafers and the like
Patent #: 4898471
Issued on: 02/06/1990
Inventor: Vaught, et al.

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Inventors

Application

No. 10/033069 filed on 12/27/2001

US Classes:

356/237.4, On patterned or topographical surface (e.g., wafer, mask, circuit board)356/237.5On patterned or topographical surface (e.g., wafer, mask, circuit board)

Examiners

Primary: Pham, Hoa Q.

Attorney, Agent or Firm

International Classes

G01N 21/47 (20060101)
G01N 21/95 (20060101)
G01N 21/88 (20060101)

Abstract

A curved mirrored surface is used to collect radiation scattered by a sample surface and originating from a normal illumination beam and an oblique illumination beam. The collected radiation is focused to a detector. Scattered radiation originating from the normal and oblique illumination beams may be distinguished by employing radiation at two different wavelengths, by intentionally introducing an offset between the spots illuminated by the two beams or by switching the normal and oblique illumination beams on and off alternately. Beam position error caused by change in sample height may be corrected by detecting specular reflection of an oblique illumination beam and changing the direction of illumination in response thereto. Butterfly-shaped spatial filters may be used in conjunction with curved mirror radiation collectors to restrict detection to certain azimuthal angles.

Other References

  • Y Yatsugake et al., "Surface Inspection System for Estimation of Wafer," Hitachi Electronics Engineering Technical Report, vol. 11, Jan. 1996, pp.21-26
  • Figure, Hitachi Electronics Engineering Co., Ltd., presented by Etsuro Morita of Mitsubishi Materials Silicon Corp. in a presentation entitled "Exploration of COP and COP Defect Crystal Originated `Particles`," at the Sixth International Workshop and 300 Millimeter Wafers on Dec. 5, 1996 in Mauhari, Japan
  • Partial Search Report dated Oct. 18, 2000
  • Search Report Corresponding to PCT Application No. PCT/US98/19564 issued by the International Patent Office on Feb. 8, 1999
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