Semiconductor device and method of manufacturing the same
May 15, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod for manufacturing an IC module for an IC card whereby an IC device and surrounding encapsulant are thinned by material removal Semiconductor device and method for manufacturing the same Semiconductor device and method of manufacturing the same Method for constructing a leadless array package Semiconductor device using a chip scale package Method of manufacturing resin encapsulated semiconductor device Semiconductor device with economical compact package and process for fabricating semiconductor device Resin overmolded type semiconductor device 6321734 InventorsAssigneeApplicationNo. 858230 filed on 05/15/2001US Classes:257/620, With peripheral feature due to separation of smaller semiconductor chip from larger wafer (e.g., scribe region, or means to prevent edge effects such as leakage current at peripheral chip separation area)257/738, Ball shaped257/778, Flip chip257/795, With specified filler material257/E21.502, Encapsulation, e.g., encapsulation layer, coating (EPO)257/E21.508, Forming solder bumps (EPO)257/E23.021, Bump or ball contacts (EPO)257/E23.124Device being completely enclosed (EPO)ExaminersPrimary: Elms, RichardAssistant: Menz, Douglas Attorney, Agent or FirmForeign Patent References
International ClassH01L 023/544Foreign Application Priority Data2000-05-18 JPAbstractThe back surface of a semiconductor wafer having a plurality of chip-forming regions each provided with a plurality of connection pads on the surface is bonded to a dicing tape, followed by fully cutting the semiconductor wafer along a cut line so as to form a cutting groove. Then, a front side protective film is formed on the front surface. The front side protective film has an open portion exposing the central portion of the connection pad, and is filled in the cutting groove. After formation of a columnar electrode connected to the connection pad via a wiring, a sealing film is formed on the front side protective film. Further, the cutting groove filled with the front side protective film is cut in substantially the center in the width direction, followed by peeling off the dicing tape so as to form individual semiconductor devices each forming a chip.Other References
Field of SearchWith peripheral feature due to separation of smaller semiconductor chip from larger wafer (e.g., scribe region, or means to prevent edge effects such as leakage current at peripheral chip separation area)With specified filler material Ball shaped Flip chip Substrate dicing Utilizing a coating to perfect the dicing Flip-chip-type assembly | |
