Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
Patent 6592663 Issued on July 15, 2003. Estimated Expiration Date: 
June 8, 2020. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
June 8, 2020. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesLow temperature method of preparing GaN single crystals Process for preparing bulk cubic gallium nitride Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method Patent #: 6270569 InventorsAssigneeApplicationNo. 590063 filed on 06/08/2000US Classes:117/68, Having growth from a solution comprising a solvent which is liquid at or below 20 degrees Celsius (e.g., aqueous solution)117/13, Having pulling during growth (e.g., Czochralski method, zone drawing)117/73, Havin growth from molten state (e.g., solution melt)117/74, Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)117/75, Forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament) (e.g., VLS method)117/77, Gas or vapor state precursor or overpressure117/78, Precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, solvent, flux)117/223, Shape defined by a solid member other than seed or product (e.g., Bridgman-Stockbarger)117/224, Including pressurized crystallization means (e.g., hydrothermal)117/952Nitride containing (e.g., GaN, cBN) {C30B 29/38}ExaminersPrimary: Kunemund, RobertAttorney, Agent or FirmInternational ClassesC30B 011/04C30B 011/12 Foreign Application Priority Data1999-06-09 JPAbstractA method of making a bulk crystal substrate of a GaN single crystal includes the steps of forming a molten flux of an alkali metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenishing a compound containing N from a source outside the reaction vessel.Other References
Field of SearchHaving growth from a solution comprising a solvent which is liquid at or below 20 degrees Celsius (e.g., aqueous solution)Havin growth from molten state (e.g., solution melt) Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) Forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament) (e.g., VLS method) Gas or vapor state precursor or overpressure Precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, solvent, flux) Having pulling during growth (e.g., Czochralski method, zone drawing) Shape defined by a solid member other than seed or product (e.g., Bridgman-Stockbarger) Including pressurized crystallization means (e.g., hydrothermal) Nitride containing (e.g., GaN, cBN) {C30B 29/38} | |
