Patent ReferencesIntegrated circuit fusing technique Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing ion implantation Electronic matrix arrays and method for making the same Patent #: 4677742 InventorsApplicationNo. 875572 filed on 06/05/2001US Classes:257/529, Including programmable passive component (e.g., fuse)257/257, Light responsive or combined with light responsive device257/530, Anti-fuse257/910, DIODE ARRAYS (E.G., DIODE READ-ONLY MEMORY ARRAY)257/E23.149, Comprising fuses, i.e., connections having their state changed from conductive to nonconductive (EPO)257/E23.171, Adaptable interconnections, e.g., for engineering changes (EPO)257/E25.023Device consisting of plurality of semiconductor or other solid-state devices or components formed in or on common substrate, e.g., integrated circuit device (EPO)ExaminersPrimary: Tsai, JeyInternational ClassH01L 029/00AbstractA memory array and some addressing circuitry therefor are formed by creating circuit elements at the crossing-points of two layers of electrode conductors that are separated by a layer of a semiconductor material. The circuit elements formed at the crossing-points function as data storage devices in the memory array, and function as connections for a permuted addressing scheme for addressing the elements in the array. In order to construct the addressing circuitry, the electrode conductors are fabricated with a controlled geometry at selected crossing-points such that selected circuit elements have increased or decreased cross-sectional area. By applying a programming electrical signal to the electrodes, the electrical characteristics (e.g. resistance) of selected circuit elements can be changed according to the controlled electrode geometry. | |