Method for tungsten chemical vapor deposition on a semiconductor substrate

Patent 6544889 Issued on April 8, 2003. Estimated Expiration Date:

January 24, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

Process for depositing a low resistivity tungsten silicon composite film on a substrate
Patent #: 4629635
Issued on: 12/16/1986
Inventor: Brors

Process for CVD deposition of tungsten layer on semiconductor wafer
Patent #: 5028565
Issued on: 07/02/1991
Inventor: Chang, et al.

Deposition of tungsten
Patent #: 5407698
Issued on: 04/18/1995
Inventor: Emesh

Method for nucleation of CVD tungsten films
Patent #: 5795824
Issued on: 08/18/1998
Inventor: Hancock

Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride Patent #: 6162715
Issued on: 12/19/2000
Inventor: Mak, et al.

Inventors

Application

No. 768151 filed on 01/24/2001

US Classes:

438/680, Utilizing chemical vapor deposition (i.e., CVD)257/E21.168, Conductive layer comprising transition metal, e.g., Ti, W, Mo (EPO)257/E21.17, By chemical means, e.g., CVD, LPCVD, PECVD, laser CVD (EPO)427/253, Halogen containing compound438/685Refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)

Examiners

Primary: Meeks, Timothy

Attorney, Agent or Firm

Sughrue Mion, PLLC

Foreign Patent References

0 486 927 EP. 05/08/1992

International Class

C23C 016/08

Foreign Application Priority Data

2000-12-28 EP

Abstract

This invention relates to a method for tungsten chemical vapor deposition on a semiconductor substrate, comprising positioning said substrate within a deposition chamber, heating said substrate and depositing under low pressure the tungsten on the substrate by contacting the latter with a mixture of gases flowing through the deposition chamber comprising tungsten hexafluoride (WF6), hydrogen (H2) and at least one carrier gas. The mixture of gases comprises also silane (SiH4) with such a flow rate that the flow ratio WF6 /SiH4 is from 2.5 to 6, the flow rate of WF6 being from 30 to 60 sccm, while the pressure in the deposition chamber is maintained from 0.13 to 5.33 kPa (1 and 40 Torr).

Other References

"Studies on the nucleation and growth of chemical-vapor-deposited W on TiN substrates", by Eui Song Kim et al., Materials Science and Engineering, B17 (1993), pp. 137-142
"Step coverage prediction during blanket :PCVD tungsten deposition from hydrogen, silane and tungsten hexaflouride", by Carol M. McConica et al., Proceedings of the V-Mic Conference, Jun. 13-14, 1988, pp. 268-276, Session VII: VSSI Multilevel Interconnection Dielectric Systems
"Chemical vapor deposition of Tungsten step coverage and thickness uniformity experiments", by J. C. Chang, Thin Solid Films, CH, Elsevier-Sequoia S. A. Lausanne, vol. 208, No. 2, Feb. 28, 1992, pp. 177-180, XP000261812
"The Adhesion of low pressure chemically Vapour Deposited Tungsten Films on Silicom and SIO2 for SIH4-H2-WF2 and H2-WF6 Processes", Thin Solid Films, CH., Elsevier-Sequoia S. A. Lausanne, vol. 201, No. 1, Jun. 5, 1991, pp. 167-174, XP000232794, ISSN: 0040-609