Superfine electronic device and method for making same
Patent 6525336 Issued on February 25, 2003. Estimated Expiration Date: 
February 25, 2020. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
February 25, 2020. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Inventors
AssigneeApplicationNo. 463761 filed on 06/05/1995US Classes:257/14, Quantum well257/E49.003Quantum devices, e.g., quantum interference devices, metal single electron transistor (EPO)ExaminersPrimary: Jackson, JeromeAttorney, Agent or FirmForeign Patent References
International ClassH01L 029/06Foreign Application Priority Data1991-12-24 JPAbstractA superfine electronic device is disclosed, which is constructed by atomic fine lines having a structure in which a plurality of atoms are arranged on one or a plurality of straight lines, in a ring shape or on curves with a size of atomic level, and which includes elements for doping electrons and holes. Using these atomic fine lines, it is possible to integrate semiconductor elements utilizing pn junctions at an atomic level with a high density. A groove having a sufficiently small size is formed in an insulating film disposed on a substrate. Then, atoms or molecules are supplied on the substrate and in the groove, which and are heated to a temperature sufficiently high for moving the atoms or molecules during or after the supply thereof to form a quantum fine line at edge portions of the groove.Other References
Field of SearchQuantum well | |
