U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Magneto-resistive memory array

Patent 6522576 Issued on February 18, 2003. Estimated Expiration Date: Icon_subject November 14, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

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Non-volatile, radiation-hard, random-access memory
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Issued on: 12/12/1989
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Patent #: 5349302
Issued on: 09/20/1994
Inventor: Cooper

Magnetic thin film memory device
Patent #: 5361226
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Multilayer hard bias films for longitudinal biasing in magnetoresistive transducer
Patent #: 5434826
Issued on: 07/18/1995
Inventor: Ravipati, et al.

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Inventors

Application

No. 992213 filed on 11/14/2001

US Classes:

365/158, Magnetoresistive365/171, Magnetic thin film365/173Multiple magnetic storage layers

Examiners

Primary: Lam, David

Attorney, Agent or Firm

Foreign Patent References

  • 0 776 011 EP. 05/13/1997
  • 409237410 JP. 09/13/1997
  • WO 98/20496 WO. 05/13/1998

International Class

G11C 011/00

Abstract

A low power, high speed magneto-resistive memory is disclosed. The disclosed memory directly senses the resistive state of one or more magneto-resistive memory elements. This allows the memory to be read during a single read cycle, without the need for a word line current. This may substantially increase the speed and reduce the power of the memory.

Other References

  • B Razavi and B.A. Wooley, "Design Techniques for High Speed, High Resolution Comparators", IEEE Journal of Solid State Circuits, vol. 27, pp. 1916-1926, Dec. 199
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