Semiconductor memory device
August 21, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesBit line sensing circuit and method of a semiconductor memory device Sense amplifier driving circuit Method and memory device for dynamic cell plate sensing with ac equilibrate Semiconductor memory device with overdriven sense amplifier and stabilized power-supply circuit of source follower type Memory device Semiconductor memory device Sense amplifier drive circuit Patent #: 6344760 InventorsAssigneeApplicationNo. 935010 filed on 08/21/2001US Classes:365/205, Flip-flop used for sensing365/203, Precharge365/207Differential sensingExaminersPrimary: Ho, HoaiAttorney, Agent or FirmForeign Patent References
International ClassG11C 007/00Foreign Application Priority Data2000-08-24 JPAbstractThe bit line overdrive circuit of the present invention comprises a VBLH potential generation circuit generating a bit line final potential relative to a VBLH power supply line for driving a sense amplifier, a charge adjusting capacitance C, a transistor for supplying an overdrive potential to the VBLH power supply line, and a transistor for connecting a PCS node to the VBLH power supply line. The charge pre-charged from the overdrive potential to the VBLH power supply line is shared among the capacitance of the above-noted circuit elements connected to the VBLH power supply line, the bit line capacitance, and the capacitance of a cell capacitor so as to form a VBLH power supply of a substantially one system, thereby avoiding the generation of a power supply noise caused by the power supply switching. | |
