Apparatus for forming grooves on a wafer by use of a laser
Parameter independent FET sense amplifier
Method of producing electrically isolated semiconductor devices on common crystalline substrate
Semiconductor process using lapped substrate and lapped low resistivity semiconductor carrier
ApplicationNo. 876888 filed on 06/06/2001
US Classes:438/460, SEMICONDUCTOR SUBSTRATE DICING438/462, Having specified scribe region structure (e.g., alignment mark, plural grooves, etc.)438/465, Having a perfecting coating438/977THINNING OR REMOVAL OF SUBSTRATE
ExaminersPrimary: Niebling, John F.
Assistant: Roman, Angel
Attorney, Agent or Firm
Foreign Patent References
International ClassesH01L 021/46
AbstractA semiconductor wafer is diced before thinning. The wafer is diced only part of the way through, to form grooves which are at least as deep as the final thickness of each chip to be obtained from the wafer. Then the wafer backside is etched with a dry etch, for example, atmospheric pressure plasma etch. The wafer is thinned until the grooves are exposed from the backside. The dry etch leaves the chip's backside smooth. After the grooves have been exposed, the dry etch is continued to remove damage from the chip sidewalls and to round the chips' bottom edges and corners. The grooves' aspect ratio is large to reduce the lateral etch rate of the chip sidewalls and thus allow more area for on-chip circuitry.