Magneto-resistive memory having sense amplifier with offset control
October 31, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3573485 Volatile/non-volatile logic latch circuit Sense amplifier Magnetoresistive memory including thin film storage cells having tapered ends Differential arrangement magnetic memory cell Differential magnetoresistive memory sensing Non-volatile, radiation-hard, random-access memory Sense amplifier input stage for single array memory Magnetic thin film memory device Multilayer hard bias films for longitudinal biasing in magnetoresistive transducer InventorsApplicationNo. 002071 filed on 10/31/2001US Classes:365/158MagnetoresistiveExaminersPrimary: Nguyen, Tan T.Attorney, Agent or FirmForeign Patent References
International ClassG11C 011/00AbstractA magneto-resistive memory is disclosed that includes a high-speed sense amplifier that can reliably operate at low signal levels. The sense amplifier includes offset cancellation to reduce or eliminate the internal offsets of the amplifier. The offset cancellation is controlled by one or more switches, which during operation, selectively enable the offset cancellation of the amplifier and store the offsets in one or more coupling capacitors.Other References
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