Non-volatile memory cell and sensing method
Symmetrical polarization enhancement in a ferroelectric memory cell
Semiconductor memory device and various systems mounting them
Nonvolatile ferroelectric memory
Ferroelectric memory and screening method therefor
Semiconductor memory device utilizing a polarization state of a ferroelectric film
Non-volatile semiconductor integrated memory device Patent #: 6198652
ApplicationNo. 956938 filed on 09/21/2001
US Classes:365/145, Ferroelectric365/117, Ferroelectric365/149Capacitors
ExaminersPrimary: Nelms, David C.
Assistant: Le, Thong
Attorney, Agent or Firm
International ClassG11C 011/22
Foreign Application Priority Data2000-10-17 JP
AbstractA ferroelectric memory device comprises a word line, first and second bit lines cross to the word line, a memory cell including a first transistor a gate of which is coupled to the word line and one of source and drain of which is coupled to the first bit line, a second transistor a gate of which is coupled to the word line and one of source and drain of which is coupled to the second bit line, and a ferroelectric cell capacitor coupled to the other of source and drain of the first and second transistor, and first and second capacitors each coupled via a switching transistor to a respective one of the first and second bit lines, wherein first and second voltages complementary to each other are applied to the first and second bit lines, via the first and second capacitors, respectively.