Ferroelectric memory device
September 21, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesNon-volatile memory cell and sensing method Symmetrical polarization enhancement in a ferroelectric memory cell Semiconductor memory device and various systems mounting them Nonvolatile ferroelectric memory Ferroelectric memory and screening method therefor Semiconductor memory device utilizing a polarization state of a ferroelectric film Non-volatile semiconductor integrated memory device Patent #: 6198652 InventorsAssigneeApplicationNo. 956938 filed on 09/21/2001US Classes:365/145, Ferroelectric365/117, Ferroelectric365/149CapacitorsExaminersPrimary: Nelms, David C.Assistant: Le, Thong Attorney, Agent or FirmInternational ClassG11C 011/22Foreign Application Priority Data2000-10-17 JPAbstractA ferroelectric memory device comprises a word line, first and second bit lines cross to the word line, a memory cell including a first transistor a gate of which is coupled to the word line and one of source and drain of which is coupled to the first bit line, a second transistor a gate of which is coupled to the word line and one of source and drain of which is coupled to the second bit line, and a ferroelectric cell capacitor coupled to the other of source and drain of the first and second transistor, and first and second capacitors each coupled via a switching transistor to a respective one of the first and second bit lines, wherein first and second voltages complementary to each other are applied to the first and second bit lines, via the first and second capacitors, respectively.Other References
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