Semiconductor device and method of manufacturing the same
Patent 6483151 Issued on November 19, 2002. Estimated Expiration Date: 
January 4, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
January 4, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesSeparately optimized gate structures for n-channel and p-channel transistors in an integrated circuit Patent #: 6255698 InventorsAssigneeApplicationNo. 754637 filed on 01/04/2001US Classes:257/369, Complementary insulated gate field effect transistors257/407, With gate electrode of controlled workfunction material (e.g., low workfunction gate material)257/412, Gate electrode of refractory material (e.g., polysilicon or a silicide of a refractory or platinum group metal)257/915WITH TITANIUM NITRIDE PORTION OR REGIONExaminersPrimary: Prenty, Mark V.Attorney, Agent or FirmForeign Patent References
International ClassH01L 029/76Foreign Application Priority Data2000-01-21 JPAbstractOne object of the present invention is to suppress a threshold voltage of at least an n-channel MISFET using a nitride of a high melting point metal at it's gate electrode. In order to achieve the object, a gate electrode 109 of a p-channel MISFET is constituted of a titanium nitride film 106 and a tungsten film 107 formed on the film 106 and a gate electrode 110a of an n-channel MISFET is constituted of a titanium nitride film 106a and a tungsten film 107 formed on the film 106a. The titanium nitride film 106a is formed by nitrogen ion implantation in the titanium nitride film 106 to decrease the work function.Field of SearchComplementary insulated gate field effect transistorsComplementary transistors in wells of opposite conductivity types more heavily doped than the substrate region in which they are formed, e.g., twin wells Insulated gate field effect transistors of different threshold voltages in same integrated circuit (e.g., enhancement and depletion mode) With gate electrode of controlled workfunction material (e.g., low workfunction gate material) Gate insulator includes material (including air or vacuum) other than SiO 2 Gate electrode of refractory material (e.g., polysilicon or a silicide of a refractory or platinum group metal) WITH TITANIUM NITRIDE PORTION OR REGION | |
