Optical module
Patent 6480639 Issued on November 12, 2002. Estimated Expiration Date: 
September 22, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
September 22, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesEdge illuminated photodetector with optical fiber alignment Method of manufacturing optical assemblies Integrated circuit structure with multiple common planes and method of forming the same Circuit and method of reducing cross-talk in an integrated circuit substrate Patent #: 5900763 InventorsAssigneeApplicationNo. 158090 filed on 09/22/1998US Classes:385/14, INTEGRATED OPTICAL CIRCUIT257/544, With pn junction isolation257/550, With lightly doped surface layer of one conductivity type on substrate of opposite conductivity type, having plural heavily doped portions of the one conductivity type between the layer and substrate, different ones of the heavily doped portions having differing depths or physical extent385/49, Fiber to thin film devices385/88, Optical fiber to a nonfiber optical device connector385/89, Plural fiber/device connections385/92With housingExaminersPrimary: Sanghavi, HemangAttorney, Agent or FirmForeign Patent References
International ClassesG02B 006/12G02B 006/36 H01L 029/00 Foreign Application Priority Data1997-09-26 JPAbstractIn an optical module having a silicon substrate, a plurality of optical semiconductor devices and optical waveguides for performing transmission of optical signals by the semiconductor devices integrated on the silicon substrate, the silicon substrate is doped with an impurity to increase the number of carriers in the silicon substrate for suppressing optical crosstalk between the plurality of optical semiconductor devices, the optical waveguide is composed of a core part and a peripheral cladding layer of the core part, or optical fibers each coupled with each of the semiconductor devices, and an electrical resistivity of part or all of the silicon substrate is 0.1 Ωcm or less, or a lower part of an optical semiconductor light receiving device is made high in resistance, and a lower part of an optical semiconductor light emitting device is made low in resistance in which construction, each of the optical semiconductor devices is locally coated with a transparent resin, and all the parts protruding upward from the optical waveguide are coated with a light absorbent such as one or plural caps.Other References
Field of SearchINTEGRATED OPTICAL CIRCUITFiber to thin film devices Waveguide to waveguide Optical fiber to a nonfiber optical device connector Plural fiber/device connections Fiber adjustable relative to device Fiber permanently fixed after adjustment With housing Including lens Sealed from environment Lightly doped junction isolated resistor (e.g., ion implanted resistor) With pn junction isolation With means to control isolation junction capacitance (e.g., lightly doped layer at isolation junction to increase depletion layer width) With substrate and lightly doped surface layer of same conductivity type, separated by subsurface heavily doped region of opposite conductivity type (e.g., "collector diffused isolation" integrated circuit) With lightly doped surface layer of one conductivity type on substrate of opposite conductivity type, having plural heavily doped portions of the one conductivity type between the layer and substrate, different ones of the heavily doped portions having differing depths or physical extent | |
