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Emitter material having a plurlarity of grains with interfaces in between

Patent 6479939 Issued on November 12, 2002. Estimated Expiration Date: Icon_subject December 2, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Field emission structures produced on macro-grain polysilicon substrates
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Issued on: 07/12/1994
Inventor: Cathey, et al.

Light emission element using a polycrystalline semiconductor material of III-V group compound
Patent #: 5369290
Issued on: 11/29/1994
Inventor: Kawasaki, et al.

Method of making wide band gap field emitter
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Issued on: 07/16/1996
Inventor: Kumar

Amorphic diamond film flat field emission cathode
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Inventor: Kumar, et al.

Amorphic diamond film flat field emission cathode
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Inventor: Kumar, et al.

Multi-layer carbon-based coatings for field emission
Patent #: 5821680
Issued on: 10/13/1998
Inventor: Sullivan, et al.

Field emitter with wide band gap emission areas and method of using
Patent #: 5861707
Issued on: 01/19/1999
Inventor: Kumar

Field emission devices employing diamond particle emitters
Patent #: 5977697
Issued on: 11/02/1999
Inventor: Jin, et al.

Field emission lamp structures
Patent #: 6008595
Issued on: 12/28/1999
Inventor: Fink, et al.

Field emission device Patent #: 6064148
Issued on: 05/16/2000
Inventor: Tolt, et al.

Inventors

Application

No. 453304 filed on 12/02/1999

US Classes:

315/169.3, Electroluminescent device313/310, DISCHARGE DEVICES HAVING A THERMIONIC OR EMISSIVE CATHODE313/336Point source cathodes

Examiners

Primary: Philogene, Haissa

Attorney, Agent or Firm

International Class

G09G 003/10

Abstract

A carbon film having an area of insulating material surrounded by an area of conducing material, and an area of material between the area of insulating material and the area of conducting material having a graded dielectric constant which varies from high to low from the area of insulating material to the area of conducting material.

Other References

  • W.P. Kang et al., The Effects of sp2 Content and Surface Treatment on the Field Emission of Micropatterned Pyramidal Diamond tips, Technical Digest of IVMC'97 Kyongju, Korea 1997, pp. 107-111
  • Ken Okano et al., Low-threshold cold cathodes made of nitrogen-doped chemical-vapour-deposited diamond, Nature International Weekly Journal of Science, vol. 381, No. 6578, May 1996, pp. 140-141
  • M. W. Geis, Diamond emitters fabrication and theory, 1996 American Vacuum Society (8 pp.)
  • P. Lerner et al., Theoretical Analysis of a Geis-Spindt Cold Cathode Diamond Emitter, Journal De Physique IV, Volume, pp. 39-42
  • W. A. Mackie et al., Work function measurements of diamond film surfaces, (4 pp.)
  • W. B. Choi, Field emission from diamond coated molybdeum field emitters, 1996 American Vacuum Society, (6 pp.)
  • A. F. Myers et al., Characterization of amorphous carbon coated silicon field emitters, 1996 American Vacuum Society, (6 pp.)
  • C. Bandis et al., Simultaneous field emission and photoemission from diamond, 1996 American Institute of Physics, pp. 366-368
  • Y.D. Kim et al., Direct observation of electron emission site on boron-doped polycrystalline diamond thin films using an ultra-high-vacuum scanning tunneling microscope, 1999 American Institute of Physics, pp. 3219-3221
  • L. Zhang et al., Nanostructural conductivity and surface-potential study of low-field-emission carbon films with conductive scanning probe microscopy, 1999 American Institute of Physics, pp. 3527-352
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