Vertical geometry ingan LED
September 16, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesLight emitting semiconductor devices Semiconductor light emitting device Aluminum gallium nitride laser Crystal growth method for gallium nitride-based compound semiconductor Method of manufacturing P-type compound semiconductor 5321713 Method of vapor-growing semiconductor crystal and apparatus for vapor-growing the same Method of depositing a gallium nitride-based III-V group compound semiconductor crystal layer Gallium nitride-based III-V group compound semiconductor device and method of producing the same Light-emitting gallium nitride-based compound semiconductor device Inventors
ApplicationNo. 154363 filed on 09/16/1998US Classes:257/97, More than two heterojunctions in same device257/103, With particular semiconductor material257/E33.028Including nitride (e.g., AlGaN) (EPO)ExaminersPrimary: Jackson, JeromeAttorney, Agent or FirmForeign Patent References
International ClassH01L 033/00AbstractA vertical geometry light emitting diode is disclosed that is capable of emitting light in the red, green, blue, violet and ultraviolet portions of the electromagnetic spectrum. The light emitting diode includes a conductive silicon carbide substrate, an InGaN quantum well, a conductive buffer layer between the substrate and the quantum well, a respective undoped gallium nitride layer on each surface of the quantum well, and ohmic contacts in a vertical geometry orientation.Other References
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