Semiconductor memory device
Control signal generation circuit and semiconductor memory device that can correspond to high speed external clock signal
Method and apparatus for latching data from a memory resource at a datapath unit Patent #: 6112284
AbstractA method for reading data from a memory device, according to an embodiment of the invention, is disclosed. A strobe signal from the memory device is not forwarded by a controller until after a predetermined time interval following the sending of a read command by the controller to the memory device. A first bit value is captured, according to the forwarded strobe signal, in a data signal also from the memory device. The predetermined time interval is at least as long as a roundtrip flight time interval of a reference pulse that is transmitted from the controller to the memory device and back to the controller.