Short-tolerant resistive cross point array
September 15, 2020. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3761896 Thermally reprogrammable memory array and a thermally reprogrammable memory cell therefor Three-port Josephson memory cell for superconducting digital computer Magnetic memory array using magnetic tunnel junction devices in the memory cells Memory cell capable of storing more than two logic states by using programmable resistances Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response Method and apparatus for reading/writing data in a memory system including programmable resistors Voltage biasing for magnetic ram with magnetic tunnel memory cells Voltage biasing for magnetic RAM with magnetic tunnel memory cells Magnetic random access memory circuit Patent #: 6191972 AbstractA data storage device includes a resistive cross point array of memory cells. Each memory cell includes a memory element and a resistive element connected in series with the memory element. The resistive elements substantially attenuate any sneak path currents flowing through shorted memory elements during read operations. The data storage device may be a Magnetic Random Access Memory ("MRAM") device. | |
