Metal gate stack with etch stop layer having implanted metal species
Patent 6444513 Issued on September 3, 2002. Estimated Expiration Date: 
March 19, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
March 19, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod of making thin film transistor and a silicide local interconnect Method of etching a pattern on a substrate using a scanning probe microscope Thin-film transistor and method of making same Patent #: 5905274 InventorsAssigneeApplicationNo. 810348 filed on 03/19/2001US Classes:438/216, Gate insulator structure constructed of diverse dielectrics (e.g., MNOS, etc.) or of nonsilicon compound257/57, Field effect device in amorphous semiconductor material257/58, With impurity other than hydrogen to passivate dangling bonds (e.g., halide)257/59, In array having structure for use as imager or display, or with transparent electrode257/E21.204, Conductor layer next to insulator is non-MeSi composite or compound, e.g., TiN (EPO)257/E29.16, Gate conductor material being compound or alloy material (e.g., organic material, TiN, MoSi 2 ) (EPO)438/703, Plural coating steps438/947, Subphotolithographic processing438/949Energy beam treating radiation resist on semiconductorExaminersPrimary: Ho, HoaiAssistant: Tran, Mai-Huong International ClassH01L 021/823.8AbstractA metal gate structure and method of forming the same introduces metal impurities into a first metal layer, made of TiN, for example. The impurities create a surface region of greater etch selectivity that prevents overetching of the TiN during the etching of an overlying tungsten gate during the formation of the metal gate structure. The prevention of the overetching of the TiN protects the gate oxide from undesirable degradation. The provision of aluminum or tantalum as the metal impurities provides adequate etch stopping capability and does not undesirably affect the work function of the TiN.Other References
Field of SearchField effect device in amorphous semiconductor materialWith impurity other than hydrogen to passivate dangling bonds (e.g., halide) In array having structure for use as imager or display, or with transparent electrode With heavily doped regions contacting amorphous semiconductor material (e.g., heavily doped source and drain) In array having structure for use as imager or display, or with transparent electrode Insulated electrode device is combined with diverse type device (e.g., complementary MOSFETs, FET with resistor, etc.) Plural coating steps Subphotolithographic processing Energy beam treating radiation resist on semiconductor | |
