Process flow for ARS mover using selenidation wafer bonding after processing a media side of a rotor wafer
Patent 6440820 Issued on August 27, 2002. Estimated Expiration Date: 
May 21, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
May 21, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesUltra-high density storage device Method for bonding compound semiconductor wafers to create an ohmic interface Patent #: 5661316 InventorsAssigneeApplicationNo. 860452 filed on 05/21/2001US Classes:438/459, Thinning of semiconductor substrate365/151, Molecular or atomic438/455BONDING OF PLURAL SEMICONDUCTOR SUBSTRATESExaminersPrimary: Niebling, John F.Assistant: Zarneke, David A. International ClassesH01L 021/30H01L 021/46 AbstractAn improved process flow for an atomic resolution storage (ARS) system deposits conductive electrodes, together with a protective layer, on a media side of a rotor wafer before most of other device processing, thus preserving a surface for ARS storage media from subsequent wafer thinning process. CMOS circuitry is also formed in a stator wafer at a later stage. Therefore, the CMOS circuitry is less likely to be damaged by heat processing. In addition, processing of the media side of the rotor wafer may be performed with loosened thermal budget. Finally, because the media side of the rotor wafer is processed before wafer bonding of the rotor wafer and the stator wafer, there is less probability of degradation of the wafer bonding. Therefore, device yield may be enhanced, leading to lower manufacturing cost. | |
