U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Deposition of fluorosilsesquioxane films

Patent 6440550 Issued on August 27, 2002. Estimated Expiration Date: Icon_subject October 18, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

2637718

3615272

Process for producing a low viscosity silicone resin
Patent #: 4026868
Issued on: 05/31/1977
Inventor: Merrill

Laddery lower alkylpolysilsesquioxane having heat-resistant thin film-formability and process for preparing same
Patent #: 4399266
Issued on: 08/16/1983
Inventor: Matsumura ,   et al.

Method of hydrolyzing chlorosilanes
Patent #: 4609751
Issued on: 09/02/1986
Inventor: Hajjar

Sodium free silicone resin coating compositions
Patent #: 4624870
Issued on: 11/25/1986
Inventor: Anthony

Solvent-soluble organopolysilsesquioxane, process for producing the same, and semi-conductor using the same
Patent #: 4626556
Issued on: 12/02/1986
Inventor: Nozue ,   et al.

Preparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit board
Patent #: 4670299
Issued on: 06/02/1987
Inventor: Fukuyama ,   et al.

Liquid composition for forming a coating film of organopolysiloxane and method for the preparation thereof
Patent #: 4694040
Issued on: 09/15/1987
Inventor: Hashimoto ,   et al.

Method for a plasma-treated polysiloxane coating
Patent #: 4723978
Issued on: 02/09/1988
Inventor: Clodgo ,   et al.

More ...

Inventor

Assignee

Application

No. 420052 filed on 10/18/1999

US Classes:

428/312.6, Of silicon-containing material (e.g., glass, etc.)106/287.1, Silicon containing other than solely as silicon dioxide or as part of an aluminum-containing compound257/E21.276, Deposition of halogen doped silicon oxide, e.g., fluorine doped silicon oxide (EPO)423/325Oxygen containing

Examiners

Primary: Copenheaver, Blaine
Assistant: Roche , Leanna

Attorney, Agent or Firm

Foreign Patent References

  • 2100278 CA. 01/13/1994
  • 196 08 904 DE. 09/13/1996
  • 0 270 229 EP. 06/13/1988
  • 0 270 231 EP. 06/13/1988
  • 0 270 263 EP. 06/13/1988
  • 0 270 369 EP. 06/13/1988
  • 0 323 103 EP. 07/13/1989
  • 0 323 186 EP. 07/13/1989
  • 0 410 564 EP. 01/13/1991
  • 0 419 076 EP. 03/13/1991
  • 0 427 395 EP. 05/13/1991
  • 0 461 782 EP. 12/13/1991
  • 0 462 715 EP. 12/13/1991
  • 0 466 205 EP. 01/13/1992
  • 0 493 879 EP. 07/13/1992
  • 0 510 872 EP. 10/13/1992
  • 0 512 717 EP. 11/13/1992
  • 0 516 144 EP. 12/13/1992
  • 0 516 308 EP. 12/13/1992
  • 0 560 485 EP. 09/13/1993
  • 0 576 166 EP. 12/13/1993
  • 0 596 678 EP. 05/13/1994
  • 0 599 209 EP. 06/13/1994
  • 0 604 779 EP. 07/13/1994
  • 0 606 580 EP. 07/13/1994
  • 0 606 588 EP. 07/13/1994
  • 0 615 000 EP. 09/13/1994
  • 0 616 001 EP. 09/13/1994
  • 0 652 246 EP. 05/13/1995
  • 0 686 680 EP. 12/13/1995
  • 0 725 103 EP. 08/13/1996
  • 0 730 298 EP. 09/13/1996
  • 0 270 229 EP. 06/13/1998
  • 2 199 817 GB. 07/13/1988
  • 52-31854 JP. 08/13/1977
  • 53-88099 JP. 08/13/1978
  • 55-111148 JP. 08/13/1980
  • 56-139533 JP. 10/13/1981
  • 57-112047 JP. 07/13/1982
  • 58-003249 JP. 01/13/1983
  • 58-066335 JP. 04/13/1983
  • 59-109565 JP. 06/13/1984
  • 59-189126 JP. 10/13/1984
  • 59-190211 JP. 10/13/1984
  • 60-42426 JP. 03/13/1985
  • 60-86017 JP. 05/13/1985
  • 60-124943 JP. 07/13/1985
  • 61-029153 JP. 02/13/1986
  • 61-127732 JP. 06/13/1986
  • 61-292342 JP. 12/13/1986
  • 2-277255 JP. 11/13/1990
  • 3-6845 JP. 01/13/1991
  • 3-227321 JP. 10/13/1991
  • 4-252228 JP. 09/13/1992
  • 4-252229 JP. 09/13/1992
  • 6248085 JP. 09/13/1994
  • 6306175 JP. 11/13/1994
  • WO 97/10282 WO. 03/13/1997

International Class

B32B 003/00

Abstract

There is provided an array of fluoro-substituted silsesquioxane thin film precursors having a structure wherein fluoro groups are bonded to the silicon atoms of a silsesquioxane cage. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [F--SiO1.5 ]x [H--SiO1.5 ]y, wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. Also provided are films made from these precursors and objects comprising these films.

Other References

  • Herren et al., New Synthetic Route to Polyhedral Organylsilsesquioxanes, Helv. Chim. Acta 74:24-26 (1991).
  • Lucovsky, et al. "Local Atomic Bonding in Fluorinated Silicon Oxides: Bond-Ionicity-Controlled Contributions of Infrared-Active Vibrations to the Static Dielectric Constant", dated Mar. 1997, pp. 1368-1373
  • Chang, et al. "Enhancing the Thermal Stability of Low Dielectric Constant Hydrogen Silsesquioxane by Ion Implantation" dated 1998, pp. 351-355
  • Encyclopedia of Chemical Technology, 4th Edition, John Wiley & Sons, Inc., 1995, vol. 14, p. 177
  • Hacker, N., "Organic and Inorganic Spin-On Polymers for Low-Dielectric-Constant Applications," MRS Bulletin, vol. 22, No. 10, Oct. 1997, pp. 33-38
  • Olsson, Arkiv. Kemi. 13:367-78 (1958)
  • Barry et al., J. Am Chem. Soc. 77:4248-52 (1955)
  • Dittmar et al., J. Organomet. Chem. 489:185-194 (1995)
  • Rikowski et al., Polyhedron 16:3357-336
PatentsPlus Images
Enhanced PDF formats
loading...
PatentsPlus: add to cart
PatentsPlus: add to cartSearch-enhanced full patent PDF image
$9.95more info
 
Sign InRegister
Username  
Password   
forgot password?