U.S. patents available from 1976 to present.
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Vertical gate transistors in pass transistor programmable logic arrays

Patent 6437389 Issued on August 20, 2002. Estimated Expiration Date: Icon_subject August 22, 2020. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Programmable memory decode circuits with transistors with vertical gates Patent #: 6219299
Issued on: 04/17/2001
Inventor: Forbes, et al.

Inventors

Application

No. 643296 filed on 08/22/2000

US Classes:

257/302, Vertical transistor257/314, Variable threshold (e.g., floating gate memory device)257/315, With floating gate electrode326/39, Array (e.g., PLA, PAL, PLD, etc.)326/40, With flip-flop or sequential device326/41, Significant integrated structure, layout, or layout interconnections326/47, Significant integrated structure, layout, or layout interconnections326/102, Field-effect transistor365/230.06Particular decoder or driver circuit

Examiners

Primary: Nelms, David C.
Assistant: Le, Dinh T.

Attorney, Agent or Firm

International Class

H01L 027/108

Abstract

Systems and methods are provided for vertical gate transistors in static pass transistor programmable logic arrays. The vertical gate transistors have multiple vertical gates which are edge defined such that only a single transistor is required for multiple logic inputs. Thus, a minimal surface area is required for each logic input. The novel programmable logic array of the present invention includes a plurality of input lines for receiving an input signal, a plurality of output lines, and one or more arrays having a first logic plane and a second logic plane connected between the input lines and the output lines. The first logic plane and the second logic plane comprise a plurality of logic cells arranged in rows and columns for providing a sum-of-products term on the output lines responsive to the received input signal. According to the teachings of the present invention, each logic cell includes a source region and a drain region in a horizontal substrate. A depletion mode channel region separates the source and the drain regions. A number of vertical gates are located above different portions of the depletion mode channel region. At least one of the vertical gates is located above a first portion of the depletion mode channel region and is separated from the channel region by a first thickness insulator material. At least one of the vertical gates is located above a second portion of the channel region and is separated from the channel region by a second thickness insulator material. According to the present invention, there is no source nor drain region associated with each input and the gates have sub-lithographic horizontal dimensions by virtue of being edge defined vertical gates.

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