Patent ReferencesProgrammable memory decode circuits with transistors with vertical gates Patent #: 6219299 InventorsApplicationNo. 643296 filed on 08/22/2000US Classes:257/302, Vertical transistor257/314, Variable threshold (e.g., floating gate memory device)257/315, With floating gate electrode326/39, Array (e.g., PLA, PAL, PLD, etc.)326/40, With flip-flop or sequential device326/41, Significant integrated structure, layout, or layout interconnections326/47, Significant integrated structure, layout, or layout interconnections326/102, Field-effect transistor365/230.06Particular decoder or driver circuitExaminersPrimary: Nelms, David C.Assistant: Le, Dinh T. Attorney, Agent or FirmInternational ClassH01L 027/108AbstractSystems and methods are provided for vertical gate transistors in static pass transistor programmable logic arrays. The vertical gate transistors have multiple vertical gates which are edge defined such that only a single transistor is required for multiple logic inputs. Thus, a minimal surface area is required for each logic input. The novel programmable logic array of the present invention includes a plurality of input lines for receiving an input signal, a plurality of output lines, and one or more arrays having a first logic plane and a second logic plane connected between the input lines and the output lines. The first logic plane and the second logic plane comprise a plurality of logic cells arranged in rows and columns for providing a sum-of-products term on the output lines responsive to the received input signal. According to the teachings of the present invention, each logic cell includes a source region and a drain region in a horizontal substrate. A depletion mode channel region separates the source and the drain regions. A number of vertical gates are located above different portions of the depletion mode channel region. At least one of the vertical gates is located above a first portion of the depletion mode channel region and is separated from the channel region by a first thickness insulator material. At least one of the vertical gates is located above a second portion of the channel region and is separated from the channel region by a second thickness insulator material. According to the present invention, there is no source nor drain region associated with each input and the gates have sub-lithographic horizontal dimensions by virtue of being edge defined vertical gates.Field of SearchVertical transistorWith irregularities on electrode to facilitate charging or discharging of floating electrode With additional contacted control electrode With floating gate electrode Variable threshold (e.g., floating gate memory device) Separate control electrodes for charging and for discharging floating electrode Gate electrode in groove Array (e.g., PLA, PAL, PLD, etc.) With flip-flop or sequential device Significant integrated structure, layout, or layout interconnections Significant integrated structure, layout, or layout interconnections Field-effect transistor Multiplexing Particular connection Extended floating gate | |