Method and apparatus thereof for burn-in testing of a static random access memory
Patent 6414889 Issued on July 2, 2002. Estimated Expiration Date: 
July 3, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
July 3, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMemory cell having a super supply voltage Semiconductor device incorporating voltage reduction circuit therein Patent #: 5463585 InventorsApplicationNo. 681989 filed on 07/03/2001US Classes:365/201TestingExaminersPrimary: Zarabian, A.Attorney, Agent or FirmInternational ClassG11C 007/00AbstractA apparatus uses a test method to perform burn-in testing of a static random access memory that has a plurality of word lines, a plurality of first bit lines, a plurality of second bit lines, and a plurality of memory cells for storing data. Each of the memory cells is coupled to a corresponding word line, a corresponding first bit line, a corresponding second bit line, and a power supply that is used to apply a working voltage to the memory cell to drive the memory cell. When the apparatus tests the static random access memory, the apparatus adjusts the working voltage according to a potential of the word lines and voltage gaps between the first bit lines and the second bit lines. | |
