U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Frequency-characteristics variable filter, duplexer, and communication apparatus

Patent 6414566 Issued on July 2, 2002. Estimated Expiration Date: Icon_subject June 1, 2020. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Antenna diversity switching device with switching circuits between the receiver terminal and each antenna
Patent #: 5594394
Issued on: 01/14/1997
Inventor: Sasaki, et al.

Resonator filter with variable tuning
Patent #: 5627502
Issued on: 05/06/1997
Inventor: Ervasti

Antenna duplexer Patent #: 6085071
Issued on: 07/04/2000
Inventor: Yamada, et al.

Inventor

Assignee

Application

No. 585201 filed on 06/01/2000

US Classes:

333/134, Utilizing long line element333/103Having semiconductor operating means

Examiners

Primary: Pascal, Robert
Assistant: Takaoka, Dean

Attorney, Agent or Firm

Foreign Patent References

  • 10-150304 JP 06/18/1998

International Class

H01P 001/20

Foreign Application Priority Data

1999-06-02 JP

Abstract

A frequency-characteristics variable filter, a duplexer, and a communication apparatus that can be operated at reduced bias voltages that are applied to diodes provided for switching frequency characteristics without reducing the stability of frequency characteristics and without increasing the occurrence of skews. Also, the single duplexer can be used for two frequency bands. As a diode for each of resonators in a transmitting filter and the first resonator in a receiving resonator, a diode having an interterminal electrostatic capacitance in the off state smaller than that of a diode used for other resonators is used. Also, the diodes for the resonators excluding the first resonator in the receiving filter has a lower forward resistance in the on state and an Q value in the off state higher than those of other diodes.

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