Light-emitting diode
Patent 6396082 Issued on May 28, 2002. Estimated Expiration Date: 
March 23, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
March 23, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesLight-emitting device and recording device using the same 6274890 InventorsAssigneeApplicationNo. 787873 filed on 03/23/2001US Classes:257/79, INCOHERENT LIGHT EMITTER STRUCTURE257/98, With reflector, opaque mask, or optical element (e.g., lens, optical fiber, index of refraction matching layer, luminescent material layer, filter) integral with device or device enclosure or package257/99, With housing or contact structure257/100, Encapsulated257/433, With housing or encapsulation257/684, With semiconductor element forming part (e.g., base, of housing)257/E33.057, Adapted for surface mounting (EPO)257/E33.059, Encapsulation (EPO)257/E33.061, Comprising luminescent material (e.g., fluorescent) (EPO)257/E33.073Refractive means (e.g., lens) (EPO)ExaminersPrimary: Flynn, Nathan J.Assistant: Forde , Remmon R. Attorney, Agent or FirmForeign Patent References
International ClassH01L 027/15Foreign Application Priority Data1999-07-29 JPAbstractA light emitting diode 21 in which a through hole 25 is provided in a glass epoxy substrate 22 which extends from the upper surface 26a to the lower surface 26b thereof, a transparent resin section 27 is used to fill the through hole 25, a light emitting diode element 29 made of a gallium nitride based compound semiconductor with a transparent element substrate of sapphire glass 30 is fixed on top of the transparent resin section 27 using a transparent adhesive 37, and light blocking electrodes 33, 34 are provided on the upper surface of the light emitting diode element 29, and light emitted from the light emitting diode element 29 passes through the transparent resin section 27 and is guided out through a bottom surface 26b of the glass epoxy substrate 22. When the light emitting diode 21 is mounted onto a motherboard 41, by dropping the resin sealing body 38 of the light emitting diode 21 down into an insertion hole 42 formed in the motherboard 41, the height dimension of the mounted light emitting diode 21 mounted can be reduced.Field of SearchINCOHERENT LIGHT EMITTER STRUCTUREWith specific housing or contact structure With heterojunction With contoured external surface (e.g., dome shape to facilitate light emission) With reflector, opaque mask, or optical element (e.g., lens, optical fiber, index of refraction matching layer, luminescent material layer, filter) integral with device or device enclosure or package With housing or contact structure Encapsulated With housing or encapsulation With semiconductor element forming part (e.g., base, of housing) With structure for mounting semiconductor chip to lead frame (e.g., configuration of die bonding flag, absence of a die bonding flag, recess for LED) | |
