Patent 6387712 Issued on May 14, 2002. Estimated Expiration Date: December 3, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
438/3, HAVING MAGNETIC OR FERROELECTRIC COMPONENT257/E21.272, With perovskite structure (EPO)257/E29.164, With at least one ferroelectric layer (EPO)438/763, Layers formed of diverse composition or by diverse coating processes438/792, Utilizing electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.)438/909CONTROLLED ATMOSPHERE
In a film structure comprising a ferroelectric thin film formed on a substrate, the ferroelectric thin film contains a rare earth element (Rn), Pb, Ti, and O in an atomic ratio in the range: 0.8ࣘ(Pb+Rn)/Tiࣘ1.3 and 0.5ࣘPb/(Pb+Rn)ࣘ0.99, has a perovskite type crystal structure, and is of (001) unidirectional orientation or a mixture of (001) orientation and (100) orientation. The ferroelectric thin film can be formed on a silicon (100) substrate, typically by evaporating lead oxide and TiOx in a vacuum chamber while introducing an oxidizing gas therein.
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