U.S. patents available from 1976 to present.
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Frontside SOI gettering with phosphorus doping

Patent 6376336 Issued on April 23, 2002. Estimated Expiration Date: Icon_subject February 1, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

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Method and structure for front-side gettering of silicon-on-insulator substrates
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Inventor

Assignee

Application

No. 775215 filed on 02/01/2001

US Classes:

438/476, By layers which are coated, contacted, or diffused257/E21.32Of silicon on insulator (SOI) (EPO)

Examiners

Primary: Christianson, Keith

Attorney, Agent or Firm

International Class

H01L 021/322

Abstract

The present invention relates to a method of manufacturing a silicon-on-insulator semiconductor wafer, including the steps of (1) forming a silicon-on-insulator semiconductor wafer having at least one surface of a monocrystalline silicon film; (2) contacting the at least one surface with phosphorus ions to form a doped region of the monocrystalline silicon film doped with phosphorus above a region of the monocrystalline silicon film which remains undoped; (3) subjecting the wafer to conditions to getter at least one impurity from the undoped region into the doped region; and (4) removing a portion of the monocrystalline silicon film including the doped region from the at least one surface, leaving a substantial portion of the monocrystalline silicon film.

Other References

  • "Basic Gettering Principles" (Crystalline Defects, Thermal Processing, and Gettering), Silicon Processing For The VLSI Era, Wolf and Tauber, vol. 1: Process Technology, pp. 63-70 (1986)
  • Improved SI-EPI-Wafers by Buried Damage Layer for Extrinsic Gettering; Dziesiatv and Wencel; Humboldt Univ. Of Berlin Section of Physics, unknown date
  • Gettering Technique and Structure, IBM Technical Disclosure Bulletin 5/75
  • "Nanoscale CMOS", Proceedings of the IEEE, Wong, et al., vol. 87, No. 4, Apr. 199
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