Method of inspecting a depth of an opening of a dielectric material layer
Patent 6365423 Issued on April 2, 2002. Estimated Expiration Date: 
August 2, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
August 2, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesHigh resolution patterning on solid substrates Device analysis for face down chip Method and apparatus for monitoring wafer characteristics and/or semiconductor processing consistency using wafer charge distribution measurements Check abnormal contact and via holes by electroplating method Patent #: 6261852 InventorsAssigneeApplicationNo. 921121 filed on 08/02/2001US Classes:438/14, WITH MEASURING OR TESTING257/E21.527, Optical enhancement of defects or not directly visible states, e.g., selective electrolytic deposition, bubbles in liquids, light emission, color change (EPO)438/9, Plasma etching438/15, Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor438/16, Optical characteristic sensed438/17Electrical characteristic sensedExaminersPrimary: Niebling, John F.Assistant: Luk, Olivia Attorney, Agent or FirmInternational ClassH01L 021/66Foreign Application Priority Data2001-01-24 DEAbstractFor determining the quality of an opening formed in a dielectric material layer, a voltage contrast inspection tool is used to produce a voltage contrast image of a test pattern formed in the dielectric material layer. The voltage contrast values of openings may be compared to a reference contrast value or to different openings so as to decide whether or not the opening has a required depth. | |
