U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Flow control of process gas in semiconductor manufacturing

Patent 6363958 Issued on April 2, 2002. Estimated Expiration Date: Icon_subject March 27, 2020. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

975838

1620322

2545787

3279495

Pressure-reducing regulator valve for high-pressure gases
Patent #: 4257450
Issued on: 03/24/1981
Inventor: Ollivier

Method and apparatus for measuring and controlling volumetric flow rate of gases in a line
Patent #: 4285245
Issued on: 08/25/1981
Inventor: Kennedy

Fluid pressure regulator
Patent #: 4744387
Issued on: 05/17/1988
Inventor: Otteman

Metal diaphragm valve
Patent #: 4828219
Issued on: 05/09/1989
Inventor: Ohmi ,   et al.

Intelligent mass flow controller
Patent #: 5062446
Issued on: 11/05/1991
Inventor: Anderson

Supply pressure compensated fluid pressure regulator and method
Patent #: 5230359
Issued on: 07/27/1993
Inventor: Ollivier

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Inventor

Assignee

Application

No. 535750 filed on 03/27/2000

US Classes:

137/2, With control of flow by a condition or characteristic of a fluid137/486, Responsive to change in rate of fluid flow137/487.5Electrically actuated valve

Examiners

Primary: Chambers, A. Michael

Attorney, Agent or Firm

Foreign Patent References

  • 8-2735 JP. 01/13/1996

International Class

G05D 007/06

Abstract

A flow control system and method for controlling batchwise delivery of process gas for semiconductor manufacturing are disclosed, wherein the flow control system is operable in a flow mode for delivery of a batch of process gas in a delivery period of time and, alternately, in a no-flow mode. After the start of the delivering, the pressure drop of the gas in a reference capacity of the system is measured for a measurement period of time while interrupting the flow of process gas from a source of the process gas to the reference capacity and continuing to deliver process gas from the system to a semiconductor manufacturing apparatus at a controlled flow rate. The rate of pressure drop in the reference capacity during the measurement period of time is used as a measure of the actual flow rate. Where the actual flow rate does not agree with a specified flow rate for delivering, the controlled flow rate for a subsequent delivery period of time in which another batch of process gas is delivered, is adjusted. Components of the flow control system are arranged along a gas manifold in the form of an elongated delivery stick having a width of less than 1.5 inches, saving important space in a group of the flow control systems that may comprise up to 20 units.

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