Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method
December 7, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesUse of polysilsesquioxane without hydroxyl group for forming mask Alkali-soluble siloxane polymer, silmethylene polymer, and polyorganosilsesquioxane polymer Polysilanes, Polysiloxanes and silicone resist materials containing these compounds 3,5-disubstituted-4-acetoxystyrene and process for its production Alkali-soluble organopolysiloxane Ultraviolet light sensitive photoinitiator compositions, use thereof and radiation sensitive compositions 1,3-bis(p-hydroxybenzyl)-1,1,3,3-tetramethyldisiloxane and method for making Photosensitive resin composition having high resistance to oxygen plasma, containing alkali-soluble organosilicon polymer and photosensitive dissolution inhibitor Base developable negative photoresist composition and use thereof Photosensitive material having a silicon-containing polymer InventorsApplicationNo. 454563 filed on 12/07/1999US Classes:528/15, Material contains a Group VIII metal atom525/474, Solid polymer derived from silicon-containing reactant528/25, With organic silicon-free reactant528/27, Organic Si-free reactant contains a heterocyclic ring528/29, Organic Si-free reactant is an alcohol or alcoholate528/43, Silicon reactant contains an aryl group556/437, The carbonyl is part of a -COO- group556/440, Silicon and the oxy of the -COO- group are bonded directly to the same hydrocarbon group556/450, Two silicons bonded directly to the same oxygen556/463, Hydroxy or peroxy bonded directly to the silicon (H of hydroxy may be replaced by a substituted or unsubstituted ammonium ion or a Group IA or IIA light metal)556/466, Processes556/479Carbon to carbon unsaturation reduced by addition of a silicon hydrideExaminersPrimary: Dawson, Robert A.Assistant: Robertson, Jeffrey B. Attorney, Agent or FirmForeign Patent References
International ClassesC08G 077/06C08G 077/32 AbstractNovel silsesquioxane polymers are formed by methods which avoid the use of BBr3. The novel silsesquioxane polymers are especially useful in negative photoresist compositions and photolithographic processes. Alternatively, improved silsesquioxane polymer-containing negative photoresist compositions are obtained by using a polymer component containing a blend of silsesquioxane polymer and non-silsesquioxane polymer. The photoresist compositions provide improved dissolution characteristics enabling the use of 0.26N TMAH developer. The photoresist compositions also provide improved thermal characteristics enabling use of higher processing temperatures. The photoresist compositions are especially useful in a multilayer photolithographic processes and are capable of producing high resolution.Other References
Field of SearchWith formation of resist image, and etching of substrate or material depositionRadiation sensitive composition or product or process of making Radiation sensitive composition comprising ethylenically unsaturated compound Initiator containing Radiation-activated cross-linking agent containing Material contains a Group VIII metal atom With organic silicon-free reactant Organic Si-free reactant contains a heterocyclic ring Organic Si-free reactant is an alcohol or alcoholate Silicon reactant contains an aryl group Solid polymer derived from silicon-containing reactant The carbonyl is part of a -COO- group Silicon and the oxy of the -COO- group are bonded directly to the same hydrocarbon group Two silicons bonded directly to the same oxygen Hydroxy or peroxy bonded directly to the silicon (H of hydroxy may be replaced by a substituted or unsubstituted ammonium ion or a Group IA or IIA light metal) Processes Carbon to carbon unsaturation reduced by addition of a silicon hydride |
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