Method of forming semiconductive active area having a proximity gettering region therein and method of processing a monocrystalline silicon substrate to have a proximity gettering region
Patent 6339011 Issued on January 15, 2002. Estimated Expiration Date: 
March 5, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
March 5, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesGettering process with multi-step annealing and inert ion implantation Semiconductor wafer for epitaxially grown devices having a sub-surface getter region Gettering regions and methods of forming gettering regions within a semiconductor wafer Semiconductor wafer and method of manufacturing same Silicon and oxygen ion co-implantation for metallic gettering in epitaxial wafers Method for manufacturing semiconductor device capable of flattening surface of selectively-grown silicon layer Patent #: 6121120 InventorsApplicationNo. 799856 filed on 03/05/2001US Classes:438/473, By implanting or irradiating257/E21.318, Of silicon body, e.g., for gettering (EPO)438/143, Gettering of semiconductor substrate438/310, Gettering of semiconductor substrate438/402, And gettering of substrate438/471, GETTERING OF SUBSTRATE438/503Fluid growth from gaseous state combined with preceding diverse operationExaminersPrimary: Bowers, CharlesAssistant: Sarkar, Asok Kumar Attorney, Agent or FirmForeign Patent References
International ClassH01L 021/322AbstractIn one implementation, A method of forming semiconductive material active area having a proximity gettering region received therein includes providing a substrate comprising bulk semiconductive material. A proximity gettering region is formed within the bulk semiconductive material within a desired active area by ion implanting at least one impurity into the bulk semiconductive material. After forming the proximity gettering region, thickness of the bulk semiconductive material is increased in a blanket manner at least within the desired active area. In one implementation, a method of processing a monocrystalline silicon substrate includes forming a proximity gettering region within monocrystalline silicon of a monocrystalline silicon substrate. After forming the proximity gettering region, epitaxial monocrystalline silicon is formed on the substrate monocrystalline silicon to blanketly increase its thickness at least over the proximity gettering region.Other References
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