Process for fabricating semiconductor wafers with external gettering
July 14, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod for producing semiconductor devices having bulk defects therein Semiconductor gettering process using backside chemical mechanical planarization (CMP) and dopant diffusion Method and apparatus for removal of subsurface damage in semiconductor materials by plasma etching Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films Method to determine tool paths for thinning and correcting errors in thickness profiles of films Semiconductor substrate having a gettering layer Method of manufacturing semiconductor wafers Method for fabricating semiconductor wafers Process for recovering substrates Method of manufacturing semiconductor wafers InventorApplicationNo. 352980 filed on 07/14/1999US Classes:216/89, Etchant contains solid particle (e.g., abrasive for polishing, etc.)216/67, Using plasma216/88, Using film of etchant between a stationary surface and a moving surface (e.g., chemical lapping, etc.)257/E21.318, Of silicon body, e.g., for gettering (EPO)438/471, GETTERING OF SUBSTRATE438/691, Combined mechanical and chemical material removal438/692Simultaneous (e.g., chemical-mechanical polishing, etc.)ExaminersPrimary: Gulakowski, RandyAssistant: Ahmed, Samir Attorney, Agent or FirmForeign Patent References
International ClassesB44C 001/22H01L 021/302 AbstractA method of fabricating a semiconductor wafer is disclosed. The method reduces the number of processing steps and produces a low cost semiconductor wafer having external gettering. The method includes slicing the wafer from a single silicon crystal ingot and etching the wafer to clean impurities and residue from slicing. Thereafter, the wafer is double side polished which creates damage on both the front and back surfaces. The damage on the front surface is then removed in a subsequent plasma assisted chemical etching step and touch polishing operation which significantly improves the flatness of the wafer. The damage on the back surface created by the double side polishing remains and getters defects from the front surface and bulk regions of the wafer.Other References
Field of SearchUsing film of etchant between a stationary surface and a moving surface (e.g., chemical lapping, etc.)Etchant contains solid particle (e.g., abrasive for polishing, etc.) Using plasma GETTERING OF SUBSTRATE Ionized radiation (e.g., corpuscular or plasma treatment, etc.) Combined mechanical and chemical material removal Simultaneous (e.g., chemical-mechanical polishing, etc.) | |
