White color light emitting diode and neutral color light emitting diode
Patent 6337536 Issued on January 8, 2002. Estimated Expiration Date: 
June 21, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
June 21, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesLight emitting diode with surface emission Electroluminescent device of II-IV compound semiconductor Patent #: 5198690 InventorsAssigneeApplicationNo. 336764 filed on 06/21/1999US Classes:313/498, Solid-state type257/461, Light responsive pn junction257/607, WITH SPECIFIED DOPANT (E.G., PLURAL DOPANTS OF SAME CONDUCTIVITY IN SAME REGION)257/E33.061, Comprising luminescent material (e.g., fluorescent) (EPO)313/499Semiconductor depletion layer typeExaminersPrimary: Patel, Nimeshkumar D.Assistant: Guharay, Karabi Attorney, Agent or FirmForeign Patent References
International ClassH01L 033/00Foreign Application Priority Data1998-07-09 JPAbstractA white color or neutral color LED having an n-type ZnSe single crystal substrate doped with I, Cl, Br, Al, Ga or In as SA-emission centers and an epitaxial film structure including a ZnSe, ZnCdSe or ZnSeTe active layer and a pn-junction. The active layer emits blue or bluegreen light. The SA-emission centers in the ZnSe substrate convert blue or bluegreen light to yellow or orange SA-emission. The blue or bluegreen light from the epitaxial film structure and the yellow or orange light from the ZnSe substrate synthesize white color light or neutral color light between red and blue.Other References
Field of SearchSolid-state typeSemiconductor depletion layer type Matrix or array Light conversion With phosphor embedding material With particular phosphor or electrode material Organic phosphor With envelope or encapsulation Single crystal Fluroescent, phosphorescent, or luminescent layer ELECTROLUMINESCENT With particular semiconductor material Multi-color emission With particular doping concentration Light responsive pn junction WITH SPECIFIED DOPANT (E.G., PLURAL DOPANTS OF SAME CONDUCTIVITY IN SAME REGION) With particular dopant material (e.g., zinc as dopant in GaAs) Heterojunction formed between semiconductor materials which differ in that they belong to different periodic table groups (e.g., Ge (group IV) - GaAs (group III-V) or InP (group III-V) - CdTe (group II-VI)) | |
