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Semiconductor arithmetic circuit and data processing device

Patent 6334120 Issued on December 25, 2001. Estimated Expiration Date: Icon_subject March 13, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Neuron circuit
Patent #: 5258657
Issued on: 11/02/1993
Inventor: Shibata, et al.

One-transistor adaptable analog storage element and array
Patent #: 5336936
Issued on: 08/09/1994
Inventor: Allen, et al.

Data synapse expressing unit capable of refreshing stored synapse load
Patent #: 5386149
Issued on: 01/31/1995
Inventor: Arima

Semiconductor device
Patent #: 5521858
Issued on: 05/28/1996
Inventor: Shibata, et al.

Programmable logic circuit w/neuron MOS transistors
Patent #: 5539329
Issued on: 07/23/1996
Inventor: Shibata, et al.

Semiconductor devices utilizing neuron MOS transistors
Patent #: 5587668
Issued on: 12/24/1996
Inventor: Shibata, et al.

Source follower using NMOS and PMOS transistors
Patent #: 5594372
Issued on: 01/14/1997
Inventor: Shibata, et al.

Neuron circuit
Patent #: 5621336
Issued on: 04/15/1997
Inventor: Shibata, et al.

Semiconductor integrated data matching circuit
Patent #: 5661421
Issued on: 08/26/1997
Inventor: Ohmi, et al.

Semiconductor neural circuit device
Patent #: 5706403
Issued on: 01/06/1998
Inventor: Shibata, et al.

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Inventors

Assignee

Application

No. 041531 filed on 03/13/1998

US Classes:

706/33, Semiconductor neural network326/98, MOSFET326/119, MOSFET (i.e., metal-oxide semiconductor field-effect transistor)327/389Insulated gate FET (e.g., MOSFET, etc.)

Examiners

Primary: Davis, George B.

Attorney, Agent or Firm

Foreign Patent References

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International Classes

G06F 015/18
H03K 019/096
H03K 017/16

Foreign Application Priority Data

1997-03-15 JP

Abstract

A semiconductor device capable of executing size comparison operations on a plurality of data at high speed and in real time and using simple circuitry. An inverter circuit group is used containing a plurality of inverter circuits constructed using neuron MOS transistors. Predetermined signal voltages are applied from the exterior to the first input gates of the inverter circuits, and the output signals of all inverters contained in the inverter circuit group are inputted into a first logical arithmetic circuit and a second logical arithmetic circuit, and the output signal of the first logical arithmetic circuit is inputted into a third logical arithmetic circuit controlled by the output signal of the second logical arithmetic circuit, and the output of the third logical arithmetic circuit is fed back to the second input gates of the inverter circuits contained in the inverter circuit group. Bye use of the output signals of the inverter circuit groups, the position having the maximum voltage among the signal voltages inputted into the inverter circuit groups is specified.

Other References

  • Yamashita et al, "Neuron MOS Winner-Take All Circuit and its Application to Associative Memory", IEEE International Solid-State Conference, 1993.
  • Shibata et al, "Neuron Transister: A Neuron-Like High-Functionality Transfer Implementng Intelligence on Silicon", IEEE Workshop on VLSI Signal Processing, Sep. 1995.
  • Yamashita et al, "Write/Verify Free Analog Non-Volatile Memory Using a Neuron-MOS Comparator", International Symposium on Circuits and Systems, May 1996.
  • Shibata et al, "A Functional MOS Transistor Featuring Gate-Level Weighted Sum and Threshold Operations" IEEE Transactions on Electron Devices, Jun. 199
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