Digital image sensor with low device count per pixel analog-to-digital conversion
Patent 6330030 Issued on December 11, 2001. Estimated Expiration Date: 
January 5, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
January 5, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesSolid-state image taking apparatus including photodiode and circuit for converting output signal of the photodiode into signal which varies with time at variation rate depending on intensity of light applied to the photodiode Photoelectric converting apparatus with reduced electric power comsumption Patent #: 5693932 InventorApplicationNo. 002897 filed on 01/05/1998US Classes:348/297, Accumulation or integration time responsive to light or signal intensity348/308Including switching transistor and photocell at each pixel site (e.g., "MOS-type" image sensor)ExaminersPrimary: Ho, TanAttorney, Agent or FirmInternational ClassH04N 005/335AbstractA method has the first step of accumulating charge in a photo sensor to arrive at a photo sensor voltage. Then, the method increments a value in a counter and determines whether the photo sensor voltage is less than a reference voltage. If the photo sensor voltage is less than the reference voltage, then load a memory with the value in the counter. An apparatus has a photo sensor; a comparator coupled to the photo sensor; a switching element coupled to the photo sensor; an AND-gate coupled to the comparator; and a memory coupled to the AND-gate.Field of SearchSolid-state image sensorAccumulation or integration time responsive to light or signal intensity In charge coupled type image sensor X - Y architecture Photosensitive switching transistors or "static induction" transistors Including switching transistor and photocell at each pixel site (e.g., "MOS-type" image sensor) Exclusively passive light responsive elements in the matrix Charge-coupled architecture With timing pulse generator Plural photosensitive image detecting element arrays | |
