Patent ReferencesProcess and apparatus for drying surfaces Vapor device and method for drying articles such as semiconductor wafers with substances such as isopropyl alcohol Apparatus for rinsing and drying surfaces Vapor device and method for drying articles such as semiconductor wafers with substances such as isopropyl alcohol Method for removing in a centrifuge a liquid from a surface of a substrate Vapor device and method for drying articles such as semiconductor wafers with substances such as isopropyl alcohol Washing and drying method Method for cleaning and drying a semiconductor wafer Method for cleaning semiconductor wafers with sonic energy and passing through a gas-liquid-interface Moving zone Marangoni drying of wet objects using naturally evaporated solvent vapor InventorsApplicationNo. 280118 filed on 03/26/1999US Classes:134/30, Including steam, gaseous agent or temperature feature134/2, For metallic, siliceous, or calcareous basework, including chemical bleaching, oxidation or reduction134/3, Including acidic agent134/18, Combined (e.g., automatic control)134/26, Using sequentially applied treating agents134/31, Gas or vapor condensation or absorption oowork134/37, Gas or vapor blasts or currents134/61, Sequential work treating receptacles or stations with means to transfer work or fluid-applying devices134/66, With work transfer from one movable carrier to another134/95.2, With drying means134/902SEMICONDUCTOR WAFERExaminersPrimary: Markoff, AlexanderAttorney, Agent or FirmForeign Patent References
International ClassesB08B 003/04B08B 005/00 B08B 007/04 AbstractA method and apparatus for cleaning, rinsing and Marangoni drying substrates is provided. A line of fluid is sprayed along a substrate surface forming an air/fluid interface line, and a line of drying vapor is supplied to the interface line to achieve Marangoni drying. Thus, a large portion of the substrate is simultaneously dried. A preferred apparatus employs a tank of cleaning and/or rinsing fluid. Above the tank fluid a source of rinsing fluid directs rinsing fluid to the surface of a substrate forming a meniscus on the substrate surface as the substrate is lifted from the cleaning fluid, and a drying vapor source directs drying vapor to the meniscus. The drying vapor lowers the surface tension of the meniscus, inducing a Marangoni flow of rinsing fluid from the substrate's surface, and thereby drying the substrate. The cleaning fluid tank has a substrate receiving and cleaning portion and a substrate rinsing portion. The rinsing fluid source and the drying vapor source are enclosed by a drying enclosure above the rinsing portion of the tank. Thus, substrate loading, cleaning, rinsing, drying and unloading are performed with at least partial overlap in time.Other References
Field of SearchFor metallic, siliceous, or calcareous basework, including chemical bleaching, oxidation or reductionIncluding acidic agent SEMICONDUCTOR WAFER Sequential work treating receptacles or stations with means to transfer work or fluid-applying devices With work transfer from one movable carrier to another With drying means Using sequentially applied treating agents Including steam, gaseous agent or temperature feature Gas or vapor condensation or absorption oowork With work or work parts movable during treatment With treating fluid motion Plural, separately fed, and either simultaneously applied or admixed, treating fluids Gas or vapor blasts or currents Combined (e.g., automatic control) | |