Fabrication ultra-thin bonded semiconductor layers
July 27, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod of producing a thin silicon-on-insulator layer Method of producing a thin silicon on insulator layer by wafer bonding and chemical thinning Distributed feedback semiconductor laser device and a method of producing the same Process for the production of thin semiconductor material films Fabrication of defect free silicon on an insulating substrate Method for fabricating a self-aligned double-gate MOSFET by selective lateral epitaxy Soi fabrication process Self-aligned dual gate MOSFET with an ultranarrow channel Method for the transfer of thin layers of monocrystalline material to a desirable substrate Smart-cut process for the production of thin semiconductor material films InventorsApplicationNo. 373031 filed on 07/27/1999US Classes:438/458, Subsequent separation into plural bodies (e.g., delaminating, dicing, etc.)438/406, Bonding of plural semiconductive substrates438/459Thinning of semiconductor substrateExaminersPrimary: Niebling, John F.Assistant: Simkovic, Viktor Attorney, Agent or FirmInternational ClassesH01L 021/30H01L 021/46 AbstractThe invention uses implantation, typically hydrogen implantation or implantation of hydrogen in combination with other elements, to a selected depth into a wafer with that contains one or more etch stops layers, treatment to split the wafer at this selected depth, and subsequent etching procedures to expose etch stop layer and ultra-thin material layer.A method for making an ultra-thin material layer bonded to a substrate, has the steps: (a) growing an etch stop layer on a first substrate; (b) growing an ultra-thin material layer on the etch stop layer; (c) implanting an implant gas to a selected depth into the first substrate; (d) bonding the ultra-thin material layer to a second substrate; (e) treating the first substrate to cause the first substrate to split at the selected depth; (f) etching remaining portion of first substrate to expose the etch stop layer, and (g) etching the etch stop layer to expose the ultra-thin material layer.Field of SearchBonding of plural semiconductive substratesBONDING OF PLURAL SEMICONDUCTOR SUBSTRATES Having enclosed cavity Warping of semiconductor substrate Subsequent separation into plural bodies (e.g., delaminating, dicing, etc.) Thinning of semiconductor substrate Delaminating, per se DELAMINATING APPARATUS | |
