U.S. patents available from 1976 to present.
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Semiconductor device and method for manufacturing the same

Patent 6307272 Issued on October 23, 2001. Estimated Expiration Date: Icon_subject May 25, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Semiconductor device including plateless package Patent #: 4546374
Issued on: 10/08/1985
Inventor: Olsen ,   et al.

Inventors

Assignee

Application

No. 317853 filed on 05/25/1999

US Classes:

257/787, ENCAPSULATED257/666, LEAD FRAME257/672, Small lead frame (e.g., "spider" frame) for connecting a large lead frame to a semiconductor chip257/678, HOUSING OR PACKAGE257/793, Including epoxide257/E23.044For devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (EPO)

Examiners

Primary: Clark, Jhihan B

Attorney, Agent or Firm

Foreign Patent References

  • 6-151699 JP. 05/21/1994
  • 6-132468 JP. 05/21/1994
  • 9-307103 JP. 11/21/1997

International Classes

H01L 023/495
H01L 023/02
H01L 023/28

Foreign Application Priority Data

1998-05-27 JP

Abstract

A package is disclosed in which deterioration of insulating encapsulation resin attributable to the generation of heat at source wires caused by an increase in a drain current is prevented. Specifically, there is provided a semiconductor package including a header made of metal, a semiconductor chip forming a power MOSFET secured on the header, an encapsulation element made of insulating resin covering the semiconductor chip, header and the like, a suspended lead contiguous with the header protruding from one side surface of the encapsulation element, a source lead and a gate lead protruding in parallel from one side surface of the encapsulation element, and wires positioned in the encapsulation element for connecting electrodes on the upper surface of the semiconductor chip and the source and gate leads. The source lead is constituted by a plurality of leads in parallel with each other, and the ends of the leads are coupled into one coupling portion in the encapsulation element. The coupling portion and the electrodes on the semiconductor chip are connected by a plurality of aluminum wires.

Other References

  • Hitachi Databook: Hitachi Semiconductor Package, Jul. 1997, p. 329
  • Gain, Sep. 2, 1996, Hitachi Semiconductor Division, pp. 19-20
  • Hybrid Packaging Technique, May 15, 1988, Industrial Research Institute, p. 25
  • Electronic Systems of Automobiles, Aug. 5, 1992, Rikogakusha, pp. 110-11
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