Patent ReferencesProcess for producing superconducting thin films Sputter deposition for multi-component thin films Metal ion implantation apparatus Depositing different materials on a substrate Magnetic tunnel junctions with controlled magnetic response Thin film heads with insulated laminations for improved high frequency performance Thin film magnetic head Spin valve sensor with improved magnetic stability of the pinned layer Magnetic tunnel junction magnetoresistive read head with sensing layer as flux guide Deposition of insulating thin film by a plurality of ion beams Patent #: 5962080 InventorApplicationNo. 344457 filed on 06/25/1999US Classes:204/192.11, Ion beam sputter deposition204/192.2FerromagneticExaminersPrimary: Nguyen, NamAssistant: Cantelmo, Gregg Attorney, Agent or FirmInternational ClassC23C 014/34AbstractA method forms an aluminum oxide (Al2 O3) barrier layer for a tunnel junction sensor. A wafer substrate and an aluminum (Al) target are provided in a sputtering chamber which may have first and second ion beam guns. The first ion beam gun ionizes a noble gas which causes the aluminum target to sputter aluminum atoms onto the wafer substrate. Simultaneously with depositing the aluminum atoms on the wafer substrate the second ion beam gun is employed for providing ionized oxygen which is disseminated within the chamber and reacts with the aluminum atoms on the wafer substrate to form the aluminum oxide barrier layer. Optionally, the second gun may be omitted and oxygen (O2) gas introduced into the chamber through an inlet.Field of SearchIon beam sputter depositionGlow discharge sputter deposition (e.g., cathode sputtering, etc.) Specified deposition material or use Ferromagnetic Ion beam sputter deposition Metal or metal alloy substrate Inorganic oxide containing plating or implanted material Metal or metal alloy plating or implanted material Multiple magnetic storage layers |
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