U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Method of making oxide barrier layer for a spin tunnel junction

Patent 6296741 Issued on October 2, 2001. Estimated Expiration Date: Icon_subject June 25, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Process for producing superconducting thin films
Patent #: 4920094
Issued on: 04/24/1990
Inventor: Nogawa, et al.

Sputter deposition for multi-component thin films
Patent #: 4923585
Issued on: 05/08/1990
Inventor: Krauss, et al.

Metal ion implantation apparatus
Patent #: 4994164
Issued on: 02/19/1991
Inventor: Bernardet, et al.

Depositing different materials on a substrate
Patent #: 5454919
Issued on: 10/03/1995
Inventor: Hill, et al.

Magnetic tunnel junctions with controlled magnetic response
Patent #: 5650958
Issued on: 07/22/1997
Inventor: Gallagher, et al.

Thin film heads with insulated laminations for improved high frequency performance
Patent #: 5750275
Issued on: 05/12/1998
Inventor: Katz, et al.

Thin film magnetic head
Patent #: 5768065
Issued on: 06/16/1998
Inventor: Ito, et al.

Spin valve sensor with improved magnetic stability of the pinned layer
Patent #: 5768071
Issued on: 06/16/1998
Inventor: Lin

Magnetic tunnel junction magnetoresistive read head with sensing layer as flux guide
Patent #: 5898547
Issued on: 04/27/1999
Inventor: Fontana, Jr., et al.

Deposition of insulating thin film by a plurality of ion beams Patent #: 5962080
Issued on: 10/05/1999
Inventor: Tan, et al.

Inventor

Application

No. 344457 filed on 06/25/1999

US Classes:

204/192.11, Ion beam sputter deposition204/192.2Ferromagnetic

Examiners

Primary: Nguyen, Nam
Assistant: Cantelmo, Gregg

Attorney, Agent or Firm

International Class

C23C 014/34

Abstract

A method forms an aluminum oxide (Al2 O3) barrier layer for a tunnel junction sensor. A wafer substrate and an aluminum (Al) target are provided in a sputtering chamber which may have first and second ion beam guns. The first ion beam gun ionizes a noble gas which causes the aluminum target to sputter aluminum atoms onto the wafer substrate. Simultaneously with depositing the aluminum atoms on the wafer substrate the second ion beam gun is employed for providing ionized oxygen which is disseminated within the chamber and reacts with the aluminum atoms on the wafer substrate to form the aluminum oxide barrier layer. Optionally, the second gun may be omitted and oxygen (O2) gas introduced into the chamber through an inlet.

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