InventorAssigneeApplicationNo. 606791 filed on 06/28/2000US Classes:365/156, Complementary365/154Flip-flop (electrical)ExaminersPrimary: Nelms, David C.Assistant: Tran, M. Attorney, Agent or FirmInternational ClassG11C 011/00AbstractA memory system with an operating voltage of Vcc has a memory cell with first and second inverters connected input to output to make a latch defining a Q node and a QB node, and powered by a single voltage controlled Vmm line. There is a passgate transistor connected source to drain from a BIT line to the first inverter, the passgate having a strength low enough that, with Vmm substantially equal to Vcc and the gate of the passgate energized at Vcc by a WORD signal, no signal on the BIT line can flip the latch. Circuitry is provided for reducing the voltage of Vmm during a write cycle, so a signal on the BIT line may flip the latch. In preferred embodiments the memory system is applied to Programmable Logic Arrays. | |