Semiconductor memory device
Patent 6285613 Issued on September 4, 2001. Estimated Expiration Date: 
June 28, 2020. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
June 28, 2020. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesData sensing circuit with additional capacitors for eliminating parasitic capacitance difference between sensing control nodes of sense amplifier Turret device Patent #: 6016729 InventorApplicationNo. 604725 filed on 06/28/2000US Classes:365/205, Flip-flop used for sensing365/149CapacitorsExaminersPrimary: Le, Vu A.Attorney, Agent or FirmForeign Patent References
International ClassG11C 007/00Foreign Application Priority Data1999-06-29 JPAbstractA sense amplifier is provided which is easy to sense small signal voltage levels from microstructured memory cells and is suitable for use with high-speed, high-packing-density DRAMs. The sense amplifier has a CMOS flip-flop circuit which is connected to a complementary pair of bit lines and composed of a pair of PMOS transistors and a pair of NMOS transistors. The pairs of PMOS and NMOS transistors each have their common sources connected to a trench or stacked capacitor of three-dimensional structure as auxiliary capacitance for cell capacitance. When a memory cell is selected through a word line, a sense operation is performed which discharges charges on the source capacitors to the paired bit lines. In the sense amplifier, a positive feedback circuit is formed by a PMOS transistor and an NMOS transistor that are conducting in the CMOS flip-flop circuit, which allows a smooth transition from a sense operation to a restore operation. | |
