Pixel TFT and driver TFT having different gate insulation width
January 5, 2020. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod of fabricating display with semiconductor circuits on monolithic structure and flat panel display produced thereby Photo-transistor in MOS thin-film technology and method for production and operation thereof Fabricating a semiconductor device with low defect density oxide Method for driving a photo-sensor by applying a pulse voltage to an auxiliary electrode during a non-read time Method for forming a MOS transistor and structure thereof Semiconductor device and method of manufacturing same Thin film transistor and display device including same Method for fabricating thin film transistor using anodic oxidation Liquid-crystal electro-optical apparatus and method of manufacturing the same Thin film semiconductor integrated circuit and method of fabricating the same InventorsAssigneeApplicationNo. 477865 filed on 01/05/2000US Classes:257/59, In array having structure for use as imager or display, or with transparent electrode257/72, In array having structure for use as imager or display, or with transparent electrode257/347, Single crystal semiconductor layer on insulating substrate (SOI)257/350, Insulated electrode device is combined with diverse type device (e.g., complementary MOSFETs, FET with resistor, etc.)257/351, Complementary field effect transistor structures only (i.e., not including bipolar transistors, resistors, or other components)257/357, In complementary field effect transistor integrated circuit257/E21.703, Substrate is semiconductor body (EPO)257/E27.111Substrate comprising other than a semiconductor material, e.g. insulating substrate or layered substrate Including a non-semiconductor layer (EPO)ExaminersPrimary: Abraham, FetsumAttorney, Agent or FirmForeign Patent References
International ClassH01L 029/00Foreign Application Priority Data1999-01-11 JPAbstractA semiconductor device having high reliability, in which TFTs with appropriate structures for the circuit functions are arranged, is provided. Gate insulating films (115) and (116) of a driver TFT are designed thinner than a gate insulating film (117) of a pixel TFT in a semiconductor device having a driver circuit and a pixel section on the same substrate. In addition, the gate insulating films (115) and (116) of the driver TFT and a dielectric (118) of a storage capacitor are formed at the same time, so that the dielectric (118) may be extremely thin, and a large capacity can be secured.Other References
Field of SearchIn array having structure for use as imager or display, or with transparent electrodeIn array having structure for use as imager or display, or with transparent electrode Single crystal semiconductor layer on insulating substrate (SOI) Insulated electrode device is combined with diverse type device (e.g., complementary MOSFETs, FET with resistor, etc.) Complementary field effect transistor structures only (i.e., not including bipolar transistors, resistors, or other components) In complementary field effect transistor integrated circuit | |
