Capacitor electrode having conductive regions adjacent a dielectric post
May 19, 2020. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod of manufacturing field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulation Capacitor and method of formation and a memory cell formed therefrom Dynamic random access memory with fin-type stacked capacitor Method for manufacturing a stacked capacitor type semiconductor memory device with good flatness characteristics Semiconductor fabrication method of forming a master layer to combine individually printed blocks of a circuit pattern VLSI capacitors and high Q VLSI inductors using metal-filled via plugs Barrier-less plug structure Method of producing cylindrical storage node of stacked capacitor in memory cell Single-side corrugated cylindrical capacitor structure of high density DRAMs Controlled isotropic etch process and method of forming an opening in a dielectric layer InventorsAssigneeApplicationNo. 574952 filed on 05/19/2000US Classes:257/298, Capacitor for signal storage in combination with non-volatile storage means257/301, Capacitor in trench257/303, Stacked capacitor257/306, Stacked capacitor257/308, With capacitor electrodes connection portion located centrally thereof (e.g., fin electrodes with central post)257/310, With high dielectric constant insulator (e.g., Ta 2 O 5 )257/528, Passive components in ICs257/532, Including capacitor component257/700, Multiple contact layers separated from each other by insulator means and forming part of a package or housing (e.g., plural ceramic layer package)257/751, At least one layer forms a diffusion barrier257/758, Multiple metal levels on semiconductor, separated by insulating layer (e.g., multiple level metallization for integrated circuit)257/759, Including organic insulating material between metal levels257/760, Separating insulating layer is laminate or composite of plural insulating materials (e.g., silicon oxide on silicon nitride, silicon oxynitride)257/761, At least one layer containing vanadium, hafnium, niobium, zirconium, or tantalum257/768, Refractory or platinum group metal or alloy or silicide thereof257/769, Platinum group metal or silicide thereof257/774, Via (interconnection hole) shape257/E21.011, Formation of electrode (EPO)257/E21.019, Made by depositing layers, e.g., alternatingly conductive and insulating layers (EPO)257/E21.649, Making connection between transistor and capacitor, e.g., plug (EPO)361/305, Material361/311, Solid dielectric361/312, Plural dielectrics361/320, Ceramic and glass361/321.1Ceramic, glass, or oxide particlesExaminersPrimary: Williams, Alexander OscarAttorney, Agent or FirmInternational ClassesH01L 027/108H01L 027/112 H01L 029/92 H01G 004/10 AbstractA dielectric film (110) is formed overlying a semiconductor device substrate (10). A dielectric post (204) having an outer peripheral boundary having sidewalls is formed over the dielectric film (110). A first conductive film (402) is deposited at least along the sidewalls of the dielectric post (204) to form a lower electrode. A capacitor dielectric film (1801) is deposited on the first conductive film, and a upper electrode (1802) is formed on the capacitor dielectric film (1801).Field of SearchCapacitor for signal storage in combination with non-volatile storage meansStacked capacitor Of specified configuration With high dielectric constant insulator (e.g., Ta 2 O 5 ) Via (interconnection hole) shape Capacitor in trench With window means Stacked capacitor Multiple metal levels on semiconductor, separated by insulating layer (e.g., multiple level metallization for integrated circuit) With capacitor electrodes connection portion located centrally thereof (e.g., fin electrodes with central post) Insulating material With ferroelectric material layer Multiple contact layers separated from each other by insulator means and forming part of a package or housing (e.g., plural ceramic layer package) Passive components in ICs Including capacitor component Including organic insulating material between metal levels Separating insulating layer is laminate or composite of plural insulating materials (e.g., silicon oxide on silicon nitride, silicon oxynitride) Resistive to electromigration or diffusion of the contact or lead material Refractory or platinum group metal or alloy or silicide thereof Platinum group metal or silicide thereof Ceramic, glass, or oxide particles Material Solid dielectric Plural dielectrics Ceramic and glass | |
