Simplified method for cleaning silicon wafers after application of laser marks
July 1, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesWafer rinser/dryer Apparatus for cleaning and rinsing wafers Method for selective removal of a material from a wafer's alignment marks Control of time-dependent haze in the manufacture of integrated circuits Controlled, gas phase process for removal of trace metal contamination and for removal of a semiconductor layer Process for thin film formation On-line ozonation in ultra pure water membrane filtration Semiconductor wafer cleaning system Methods for high temperature water rinsing and drying of silicon wafers after being cleaned in hydrofluoric acid Method of forming and cleaning a laser marking region at a round zone of a semiconductor wafer InventorsApplicationNo. 108412 filed on 07/01/1998US Classes:134/1.3, Semiconductor cleaning134/2, For metallic, siliceous, or calcareous basework, including chemical bleaching, oxidation or reduction134/26, Using sequentially applied treating agents134/29, One a soap or an alkaline agent134/902, SEMICONDUCTOR WAFER257/E21.228Wet cleaning only (EPO)ExaminersPrimary: Markoff, AlexanderAttorney, Agent or FirmInternational ClassesB08B 003/04B08B 003/10 AbstractA simplified cleaning method for the removal of particulates and adherent residues resulting from the incorporation of laser identification marks onto silicon wafers is described. The cleaning method consists of first immersing the wafers in a heated ammoniacal/hydrogen peroxide RCA-SC-1 cleaning solution in the presence of megasonic agitation. This is followed by a immersion rinse in de-ionized water heated to at least 50° C. Finally the wafers are subjected to at least three quick-dump rinses in room temperature de-ionized water and dried. It is found that the hot de-ionized water rinse provides adequate removal of chemical residues remaining after the particle dislodging action of the megasonically agitated RCA SC-1 solution to eliminate the need for application of the acidic/hydrogen peroxide RCA SC-2 treatment.Other References
Field of SearchIncluding application of electrical radiant or wave energy to workSemiconductor cleaning For metallic, siliceous, or calcareous basework, including chemical bleaching, oxidation or reduction Using sequentially applied treating agents One a soap or an alkaline agent Including steam, gaseous agent or temperature feature With treating fluid motion SEMICONDUCTOR WAFER Semiconductor cleaning Including acidic agent | |
