Semiconductor material and method for forming the same and thin film transistor
Patent 6271066 Issued on August 7, 2001. Estimated Expiration Date: August 7, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
438/166, Including recrystallization step257/E29.082, Only element from fourth group of Periodic System in uncombined form (EPO)257/E29.293, With top gate (EPO)438/308Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.)
A semiconductor material and a method for forming the same, said semiconductor material having fabricated by a process comprising irradiating a laser beam or a high intensity light equivalent to a laser beam to an amorphous silicon film containing therein carbon, nitrogen, and oxygen each at a concentration of 5×1019 atoms⋅cm-3 or lower, preferably 1×1019 atoms⋅cm-3 or lower, without melting the amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating compact thin film semiconductor devices such as thin film transistors improved in device characteristics.
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