Planar mixed SOI-bulk substrate for microelectronic applications
November 4, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesFully integrated single-crystal silicon-on-insulator process, sensors and circuits Latid implants for increasing the effective width of transistor elements in a semiconductor device Method of manufacturing semiconductor device Method for making a dynamic random access memory using silicon-on-insulator techniques Silicon on insulator (SOI) dram cell structure and process 3-D CMOS transistors with high ESD reliability Semiconductor memory device Semiconductor memory and a method of manufacturing the same SOI/bulk hybrid substrate and method of forming the same Method of fabricating a bipolar integrated structure InventorsApplicationNo. 434191 filed on 11/04/1999US Classes:438/149, On insulating substrate or layer (e.g., TFT, etc.)257/E21.563, Using silicon implanted buried insulating layers, e.g., oxide layers, i.e., SIMOX technique (EPO)438/239, Capacitor438/423, Implanting to form insulator438/425, Combined with formation of recessed oxide by localized oxidation438/426, Recessed oxide laterally extending from groove438/439, Recessed oxide by localized oxidation (i.e., LOCOS)438/443, Etchback of recessed oxide438/450Implanting through recessed oxideExaminersPrimary: Booth, Richard A.Assistant: Gurley, Lynne A. Attorney, Agent or FirmInternational ClassH01L 021/00AbstractA process for creating a substrate including bulk silicon regions and semiconductor-on-insulator regions. Regions of a surface of a bulk silicon substrate are recessed above regions where it is desired to create buried oxide regions in the substrate. Implant mask regions are formed on the surface of the substrate over regions where it is not desired to create buried oxide regions. Buried oxide regions are formed in the substrate under the recessed regions in the substrate. The implant mask regions are removed, leaving bulk silicon regions between the buried oxide regions.Field of SearchOn insulating substrate or layer (e.g., TFT, etc.)Capacitor Implanting to form insulator Combined with formation of recessed oxide by localized oxidation Recessed oxide laterally extending from groove Recessed oxide by localized oxidation (i.e., LOCOS) Etchback of recessed oxide Implanting through recessed oxide | |
