U.S. patents available from 1976 to present.
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Post-ashing treating liquid compositions and a process for treatment therewith

Patent 6261745 Issued on July 17, 2001. Estimated Expiration Date: Icon_subject June 2, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Method of removing a cured epoxy from a metal surface
Patent #: 4171240
Issued on: 10/16/1979
Inventor: Wong

Remover solution for resist
Patent #: 4944893
Issued on: 07/31/1990
Inventor: Tanaka, et al.

Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins
Patent #: 5308745
Issued on: 05/03/1994
Inventor: Schwartzkopf

Remover solution composition for resist and method for removing resist using the same
Patent #: 5792274
Issued on: 08/11/1998
Inventor: Tanabe, et al.

Remover solution composition for resist and method for removing resist using the same
Patent #: 5905063
Issued on: 05/18/1999
Inventor: Tanabe, et al.

Aqueous rinsing composition Patent #: 5977041
Issued on: 11/02/1999
Inventor: Honda

Inventors

Assignee

Application

No. 323988 filed on 06/02/1999

US Classes:

430/331, Finishing or perfecting composition or product430/325, Post image treatment to produce elevated pattern510/176For stripping photoresist material

Examiners

Primary: Le, Hoa Van

Attorney, Agent or Firm

Foreign Patent References

  • 0 773 480 EP. 05/13/1997
  • 0 827 188 EP. 03/13/1998
  • 0 901 160 EP. 03/13/1999
  • 64-73348 JP. 03/13/1989
  • 3-205465 JP. 09/13/1991
  • 7-64297 JP. 03/13/1995
  • 8-202052 JP. 08/13/1996

International Class

G03F 007/40

Foreign Application Priority Data

1998-06-05 JP

Abstract

Disclosed herein is a post-ashing treating liquid composition comprising a salt of hydrofluoric acid with a base free from metal ions, a water-soluble organic solvent, water, and an acetylene alcohol/alkylene oxide adduct. Disclosed also herein is a process for treatment with said treating liquid composition. For removal of resist residues such as modified photoresist films and metal depositions, the treating liquid composition and the treating process can be advantageously applied to the substrates having been dry-etched, followed by ashing under severe conditions, without corrosion on metal layers and damage to an organic SOG layer formed thereon.

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