Bulk and strained silicon on insulator using local selective oxidation
Patent 6251751 Issued on June 26, 2001. Estimated Expiration Date: 
April 13, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
April 13, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesSemiconductor processing methods of forming field oxidation regions on a semiconductor substrate Method of forming silicon dioxide film containing germanium nanocrystals Layered structure with a silicide layer and process for producing such a layered structure Patent #: 5958505 InventorsApplicationNo. 290778 filed on 04/13/1999US Classes:438/439, Recessed oxide by localized oxidation (i.e., LOCOS)257/55, Amorphous semiconductor is alloy or contains material to change band gap (e.g., Si x Ge 1-x , SiN y )257/63, Amorphous semiconductor is alloy or contains material to change band gap (e.g., Si x Ge 1-x , SiN y )257/352, Substrate is single crystal insulator (e.g., sapphire or spinel)257/750, Layered257/E21.564, SOI together with lateral isolation, e.g., using local oxidation of silicon, or dielectric or polycrystalline material refilled trench or air gap isolation regions, e.g., completely isolated semiconductor islands (EPO)438/400, FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE438/410Encroachment of separate locally oxidized regionsExaminersPrimary: Bowers, CharlesAssistant: Lee, Hsien-Ming Attorney, Agent or FirmInternational ClassH01L 021/76AbstractA method for forming buried oxide regions below a single crystal semiconductor layer incorporating the steps of forming epitaxial layers having different rates of oxidation with the lower layer having a faster rate of oxidation and oxidizing the layers through an opening in a mask. A plurality of oxide isolated FET's may be formed. The invention reduces the problem of source/drain parasitic capacitance and short channel effects while isolating FET's and eliminating floating body effects of an FET by selectively oxidizing semiconductor layers.Other References
Field of SearchFORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTUREEncroachment of separate locally oxidized regions Recessed oxide by localized oxidation (i.e., LOCOS) Insulative material deposited upon semiconductive substrate Layered Amorphous semiconductor is alloy or contains material to change band gap (e.g., Si x Ge 1-x , SiN y ) Having graded composition Amorphous semiconductor is alloy or contains material to change band gap (e.g., Si x Ge 1-x , SiN y ) Substrate is single crystal insulator (e.g., sapphire or spinel) | |
