Semiconductor device and method for preparing the same
Method for forming a semiconductor device having a capacitor structure Patent #: 5985731
ApplicationNo. 344585 filed on 06/25/1999
US Classes:438/396, Stacked capacitor257/E21.01, Dielectric comprising two or more layers, e.g., buffer layers, seed layers, gradient layers (EPO)257/E21.011, Formation of electrode (EPO)257/E21.282, Formed by oxidation (EPO)438/253, Stacked capacitor438/399, Having contacts formed by selective growth or deposition438/682Silicide
ExaminersPrimary: Chaudhari, Chandra
Assistant: Huynh, Yennhu B.
Attorney, Agent or Firm
International ClassH01L 021/20
Foreign Application Priority Data1998-06-25 KR
AbstractA method of forming a capacitor of a semiconductor device which can prevent disconnection between lower electrodes by blanket-depositing a second conductive film for silicidation on a semiconductor substrate and forming an oxide of the second conductive film such as titanium dioxide (TiO2) on an interlayer dielectric using high temperature oxidation, before depositing a dielectric film, and which can obtain a high capacitance by forming both a silicide layer including the second conductive film, and the oxide of the second conductive film such as titanium dioxide (TiO2) having a high dielectric constant, on a lower electrode, and using the silicide layer and oxide as the dielectric film.