High-frequency oscillator using FETs and transmission lines
Patent 6239663 Issued on May 29, 2001. Estimated Expiration Date: 
January 13, 2020. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
January 13, 2020. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesHyperfrequency power oscillator Oscillator using microstrip line having minimized line width and length Voltage-controlled microwave oscillator with micro-stripline filter Voltage controlled oscillator with a resonator common to a resonance circuit and an oscillation circuit and a capacitor Patent #: 6104255 InventorAssigneeApplicationNo. 09/482079 filed on 01/13/2000US Classes:331/107SL, Stripline type331/117FEField-effect transistor active elementExaminersPrimary: Lam, Tuan T.Attorney, Agent or FirmInternational ClassH03B 5/18 (20060101)Foreign Application Priority Data1999-01-13 JPAbstractA high-frequency oscillator is provided, which decreases the phase noise and which has excellent mass productivity and reproducibility. This oscillator is comprised of (a) first, second, and third FETs formed on a substrate; (b) a first transmission line formed on the substrate; the first line being connected to drains of the first and second FETs formed on the substrate; (c) a second transmission line formed on the substrate; the second line being connected to gates of the first and second FETs; (d) a third transmission line formed on the substrate; the third line being connected to sources of the first and second FETs; (e) a fourth transmission line formed on the substrate; the fourth line being connected to the drain of the second FET and a drain of the third FET; (f) a fifth transmission line formed on the substrate; the fifth line being connected to the gate of the second FET and a gate of the third FET; and (g) a sixth transmission line formed on the substrate; the sixth line being connected to the source of the second FET and a source of the third FET. The first, second, and third transmission lines are coupled together due to electromagnetic field, and the fourth, fifth, and sixth transmission lines are coupled together due to electromagnetic field. | |
